Transient I-V-characteristics of OLEDs with deep traps

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 444-447

  Scheinert, S ^a   Paasch, G ^b   Nguyen, P H ^c   Berleb, S ^d   Brutting, W ^d  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b IFW DRESDEN   (Germany)

^c LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^d UNIVERSITY OF BAYREUTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HYSTERESIS; SOLID STATE DEVICES; TRANSIENTS;

HYSTERESIS EFFECT; LARGE HYSTERESIS; MEASURED CURRENTS; ORGANIC MATERIALS; STEADY-STATE CURRENTS; SYSTEMATIC VARIATION; THERMAL VELOCITY; TRANSIENT CURRENT;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84907857713     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194810     Document Type: Conference Paper

References (7)

1. J. Staudigel, M. Sto el, F. Steuber and J. Simmerer, J. Appl. Phys.,86 (1999)3895.
2. Y. Kawabe, M.M. Morrell, G.E. Jabbour, S.E. Shaheen, B. Kippelen and N. Peyghambarian, J. Appl. Phys.,84(1998)5306
3. V.I. Arkhipov, E.V. Emelianova, Y.H. Tak and H. Baler, J. Appl. Phys., 84(1998)848
4. A.J. Campbell, M.S. Weaver, D.G. Lidzey and D.D.C. Bradley, J. Appl. Phys., 84(1998)6737
5. S. Karg, V. Dyakonov, M. Meier, W. Rie , and G. Paasch, Synth. Met.,67(1994)165
6. A.J. Campbell and D.D.C. Bradley, SPIE, 3797(1999)326
7. S. Scheinert, G. Paasch, R. Tecklenburg, ESSDERC 98Editions Frontiers, p. 628