CMOS-integrated Si/SiGe quantum-well infrared microbolometer focal plane arrays manufactured with very large-scale heterogeneous 3-d integration

IEEE Journal of Selected Topics in Quantum Electronics

Volumn 21, Issue 4, 2015, Pages 30-40

  Forsberg, Fredrik ^a   Lapadatu, Adriana ^b   Kittilsland, Gjermund ^b   Martinsen, Stian ^b   Roxhed, Niclas ^a   Fischer, Andreas C ^a   Stemme, Goran ^a   Samel, Bjorn ^c   Ericsson, Per ^c   Hoivik, Nils ^d   Bakke, Thor ^e   Bring, Martin ^b   Kvisteroy, Terje ^b   Ror, Audun ^b   Niklaus, Frank ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b Sensonor AS   (Norway)

^c ACREO AB   (Sweden)

^d UNIVERSITY OF SOUTH EASTERN NORWAY   (Norway)

^e SINTEF ICT   (Norway)

Author keywords

Long wavelength infrared imaging; LWIR; MEMS; Si SiGe quantum wells,wafer level vacuum packaging; thermal imaging; uncooled microbolometer; very large scale heterogeneous 3 D integration

Indexed keywords

BOLOMETERS; CHIP SCALE PACKAGES; CMOS INTEGRATED CIRCUITS; FOCAL PLANE ARRAYS; FOCUSING; INFRARED DETECTORS; INFRARED DEVICES; INFRARED IMAGING; INFRARED RADIATION; INTEGRATED CIRCUIT DESIGN; MEMS; MONOCRYSTALLINE SILICON; PIXELS; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS; SUBSTRATES; TEMPERATURE SENSORS; THERMOGRAPHY (IMAGING); THREE DIMENSIONAL INTEGRATED CIRCUITS; VLSI CIRCUITS; WAFER BONDING;

3-D INTEGRATION; LONG-WAVELENGTH INFRARED; LWIR; UNCOOLED MICROBOLOMETERS; WAFER LEVEL VACUUM PACKAGING;

MOEMS;

EID: 84907855956     PISSN: 1077260X     EISSN: 15584542     Source Type: Journal    
DOI: 10.1109/JSTQE.2014.2358198     Document Type: Article

References (46)

1. H. Kaplan, Practical Applications of Infrared Thermal Sensing and Imaging Equipment. Bellingham, WA, USA: The Int. Soc. Opt. Eng., 2007.
2. M. A. Omar, Y. Zhou, and J. Liu, "Automated applications of the infrared imagers in the automotive assembly lines: Products and process control," Proc. SPIE, vol. 6541, p. 65410E, 2007.
3. T. Kvisterøy et al., "Far infrared low-cost uncooled bolometer for automotive use," Adv. Microsyst. Autom. Appl., VDI-Buch, pp. 265-278, 2007.
4. C. Vieider et al., "Low-cost far infrared bolometer camera for automotive use," Proc. SPIE, vol. 6542, pp. 1L.1-1L.10, 2007.
5. "Flir Unveils the First Personal Thermal imaging Device for Consumers," Flir, Wilsonville, OR, USA, 2014.
6. H. Budzier and G. Gerlach, Thermal infrared sensors: Theory, Optimisation and Practice. New York, NY, USA: Wiley, 2011.
7. M.S. Alam and A. Bal, "Improved multiple target tracking via global motion," IEEE Trans. Ind. Electron., vol. 54, no. 1, pp. 522-529, Feb. 2007.
8. S. A. Merryman and R. M. Nelms, "Diagnostic technique for power systems utilizing infrared thermal imaging," IEEE Trans. Ind. Electron., vol. 42, no. 6, pp. 615-628, Dec. 1995.
9. P. Kruse, "Can the 300 K radiating background noise limit be attained by uncooled thermal imagers?," Proc. SPIE, vol. 5406, pp. 437-446, 2004.
10. D. S. Tezcan, S. Eminoglu, and T. Akin, "A low-cost uncooled infrared microbolometer detector in standard CMOS technology," IEEE Trans. Electron Devices, vol. 50, no. 2, pp. 494-502, Feb. 2003.
11. P. W. Kruse, Uncooled Thermal Imaging Arrays, Systems, and Applications (SPIE Tutorial Texts in Optical Engineering Vol. TT51). Bellingham, WA, USA: SPIE, 2001.
12. F. Niklaus, A. Decharat, C. Jansson, and G. Stemme, "Performance model for uncooled infrared bolometer arrays and performance predictions of bolometers operating at atmospheric pressure," Infrared Phys. Technol., vol. 51, no. 3, pp. 168-177, 2008.
13. A. Lapadatu et al., "Cu-Sn wafer level bonding for vacuum encapsulation of microbolometer focal plane arrays," Trans. ECS, vol. 33, no. 4, pp. 73-82, 2010.
14. S. H. Black et al., "Advances in high-rate uncooled detector fabrication at Raytheon," Proc. SPIE, vol. 7760, p. 76600X, 2010.
15. C. Trouilleau et al., "Uncooled amorphous silicon 160 × 120 IRFPA with 25 um pixel-pitch for large volume applications," Proc. SPIE, vol. 6542, pp. 1V.1-1V.8, 2007.
16. U. Mizrahi et al., "Large-format 17 ?m high-end VOx ?-bolometer infrared detector," Proc. SPIE, vol. 8704, p. 87041H, 2013.
17. M. Kohin and N. Butler, "Performance limits of uncooled VOx microbolometer focal plane arrays," Proc. SPIE, vol. 5406, pp. 447-453, 2004.
18. D. Murphy et al., "Expanded Applications for high performance Vox ," Proc. SPIE, vol. 5783, pp. 448-459, 2005.
19. D. Murphy et al., "High-sensitivity 25-?m microbolometer FPAs," Proc. SPIE, vol. 4721, pp. 99-110, 2002.
20. F. Niklaus, C. Vieider, and H. Jakobsen, "MEMS-based uncooled infrared bolometer arrays: A review," Proc. SPIE, vol. 6836, p. 68360D, 2007.
21. S. Sedky, A.Witvrouw, H. Bender, and K. Baert, "Experimental determination of the maximum post-process annealing temperature for standard CMOSwafers," IEEE Trans. Electron Devices, vol. 48, no. 2, pp. 377-385, Feb. 2001.
22. A. Lapadatu et al., "High-performance long wave infrared bolometer fabricated by wafer bonding," Proc. SPIE, vol. 7660, p. 766016, 2010.
23. F. Forsberg et al., "Very large scale heterogeneous integration (VLSHI) and wafer-level vacuum packaging for infrared bolometer focal plane arrays," Infrared Phys. Technol., vol. 60, pp. 251-259, 2013.
24. A. Roer, A. Lapadatu, E. Wolla, and G. Kittilsland, "High performance LWIR microbolometer with Si/SiGe Quantum well thermistor and wafer level packaging," Proc. SPIE, vol. 8704, p. 87041B, 2013.
25. F. Zimmer et al., "One-megapixel monocrystalline-silicon micromirror array on CMOS driving electronics manufactured with very large-scale heterogeneous integration," J. Microelectromechanical Syst., vol. 20, no. 3, pp. 564-572, 2011.
26. M. Lapisa, F. Zimmer, F. Niklaus, A. Gehner, and G. Stemme, "CMOSintegrable piston-type micromirror array for adaptive optics made of mono-crystalline silicon using 3-D integration," in Proc. IEEE Int. Conf. Micro Electro Mech. Syst., 2009, pp. 1007-1010.
27. M. Lapisa, F. Zimmer, A. Gehner, G. Stemme, and F. Niklaus, "Driftfree micromirror arrays made of monocrystalline silicon for adaptive optics applications," IEEE J. Microelectromechanical Syst., vol. 21, no. 4, pp. 959-970, Aug. 2012.
28. M. Lapisa, G. Stemme, and F. Niklaus, "Wafer-level heterogeneous integration for MOEMS, MEMS, and NEMS," IEEE J. Sel. Topics Quantum Electron., vol. 17, no. 3, pp. 629-644, May/Jun. 2011.
29. M. Esashi and S. Tanaka, "Heterogeneous integration by adhesive bonding," Micro Nano Syst. Lett., vol. 1, no. 3, 2013.
30. C. M. Liu et al., "MEMS technology development and manufacturing in a CMOS foundry," in Proc. Int. Conf. Solid-State Sens., Actuators, Microsyst., 2011, pp. 807-810.
31. J. Seeger, M. Lim, and S. Nasiri, "Development of high-performance, high-volume consumer MEMS gyroscopes," InvenSense Inc., Sunnyvale, CA, USA, 2010.
32. J.-E. Källhammer et al., "Fulfilling the pedestrian protection directive using a long-wavelength infrared camera designed to meet the performance and cost targets," Proc. SPIE, vol. 6198, pp. 74-84, 2006.
33. F. Niklaus, E. Kälvesten, and G. Stemme, "Wafer-levelmembrane transfer bonding of polycrystalline silicon bolometers for use in infrared focal plane arrays," J. Micromechanics Microeng., vol. 11, no. 5, pp. 509-513, 2001.
34. F. Niklaus et al., "Characterization of transfer-bonded silicon bolometer arrays," Proc. SPIE, vol. 5406, p. 521, 2004.
35. F. Forsberg et al., "Heterogeneous 3-D integration of 17 m pitch Si/SiGe quantum well bolometer arrays for infrared imaging systems," J. Micromechanics Microeng., vol. 23, no. 4, p. 045017, 2013.
36. S. Tohyama et al., "New thermally isolated pixel structure," Proc. SPIE, vol. 5406, pp. 228-236, 2004.
37. M. Kimata, M. Ueno, M. Takeda, and T. Seto, "SOI diode uncooled infrared focal plane arrays," Proc. SPIE, vol. 6127, p. 61270X, 2006.
38. N. Hoivik et al., "Fluxless wafer-level Cu-Sn bonding for micro-and nanosystems packaging," in Proc. Electron. Syst.-Integr. Technol. Conf., 2010, pp. 1-5.
39. T.-T. Luu, A. Duan, K. E. Aasmundtveit, and N. Hoivik, "Optimized Cu-Sn wafer-level bonding using intermetallic phase characterization," J. Electron. Mater., vol. 42, no. 12, pp. 3582-3592, 2013.
40. S. Wissmar et al., "High signal-to-noise ratio quantum well bolometer materials," Proc. SPIE, vol. 6401, p. 64010N, 2006.
41. H. H. Radamson, M. Kolahdouz, S. Shayestehaminzadeh, A. Afshar Farniya, and S. Wissmar, "Carbon-doped single-crystalline SiGe/Si thermistor with high temperature coefficient of resistance and lownoise level," Appl. Phys. Lett., vol. 97, no. 22, pp. 223507-1-223507-2, 2010.
42. J. Y Andersson, P. Ericsson, H. H. Radamson, S. G. E. Wissmar, and M. Kolahdouz, "SiGe/Si quantum structures as a thermistor material for low cost IR microbolometer focal plane arrays," Solid-State Electron., vol. 60, no. 1, pp. 100-104, 2011.
43. K. C Liddiard, "Application of interferometric enhancement to selfabsorbing thin film thermal IR detectors," Infrared Phys., vol. 34, no. 4, pp. 379-387, 1994.
44. F. Niklaus, G. Stemme, J.-Q. Lu, and R. J Gutmann, "Adhesive wafer bonding-Applied physics reviews," J. Appl. Phys., vol. 99, no. 1, pp. 031101.1-031101.28, 2006.
45. F. Niklaus et al., "Wafer bonding with nano-imprint resists as sacrificial adhesive for fabrication of silicon-on-integrated-circuit (SOIC) wafers in 3-D integration of MEMS and ICs," Sens. Actuators A, Phys., vol. 154, no. 1, pp. 180-186, 2009.
46. M. Esashi, "Wafer level packaging ofMEMS," J. Micromechanics Microeng., vol. 18, no. 7, p. 073001, 2008.