An analytical model for the vertical insulated gate bipolar transistor

European Solid-State Device Research Conference

Volumn , Issue , 1989, Pages 431-434

  Grahn, K ^a   Eranen S ^a  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

COLLECTOR EFFICIENCY; SOLID STATE DEVICES;

CHANNEL CONDUCTANCE; COLLECTOR BIAS; CONDUCTIVITY MODULATION; EMITTER INJECTION EFFICIENCY; IGBT DEVICES; SIMULATED RESULTS; STEADY-STATE MODELING;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 84907855708     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1007/978-3-642-52314-4_88     Document Type: Conference Paper

References (0)