A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations

European Solid-State Device Research Conference

Volumn , Issue , 2000, Pages 340-343

  Serra, A D ^a   Abramo, A ^a   Palestri, P ^a   Selmi, L ^a   Widdershoven, F ^b  

^a UNIVERSITY OF UDINE   (Italy)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; LEAKAGE CURRENTS; MOS DEVICES; SOLID STATE DEVICES;

DEVICE SIMULATORS; GATE LEAKAGES; MERCURY PROBE; QUANTUM MECHANICAL; QUANTUM-MECHANICAL TREATMENTS; QUASI-BOUND STATE; SEMICLASSICAL APPROACHES; TEST STRUCTURE;

QUANTUM THEORY;

EID: 84907814607     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2000.194784     Document Type: Conference Paper

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