-
1
-
-
0018468995
-
A new method to determine effective MOSFET channel length
-
K. Tereda and H. Muta, ' 'A new method to determine effective MOSFET channel length,” Japan. J. Appl. Phys., vol. 18, p. 935, 1979.
-
(1979)
Japan. J. Appl. Phys.
, vol.18
, pp. 935
-
-
Tereda, K.1
Muta, H.2
-
2
-
-
0019060104
-
A new method to determine MOSFET channel length
-
J. G. J. Chern, P. Chang, R. F. Motta, and N. Godinho, “A new method to determine MOSFET channel length, “ IEEE Electron Device Lett., vol. EDL-1, no. 9, p. 170, 1980.
-
(1980)
IEEE Electron Device Lett.
, vol.EDL-1
, Issue.9
, pp. 170
-
-
Chern, J.G.J.1
Chang, P.2
Motta, R.F.3
Godinho, N.4
-
3
-
-
0020003558
-
Measurement of MOSFET constants
-
F. E, DelaMoneda, H. N. Kotecha, and M. Shatzkes, “Measurement of MOSFET constants,” IEEE Electron Device Lett., vol. EDL-3, p. 10, 1982.
-
(1982)
IEEE Electron Device Lett.
, vol.EDL-3
, pp. 10
-
-
DelaMoneda, F.E.1
Kotecha, H.N.2
Shatzkes, M.3
-
4
-
-
0021521674
-
Basic parameter measurement and channel length broadening effect in submicrometer MOSFET
-
K. L. Peng, S. Y. Oh, M. A. Afromowitz, and J. L. Moll, “Basic parameter measurement and channel length broadening effect in submicrometer MOSFET,” IEEE Electron Device Lett., vol. EDL-5, p. 473, 1984.
-
(1984)
IEEE Electron Device Lett.
, vol.EDL-5
, pp. 473
-
-
Peng, K.L.1
Oh, S.Y.2
Afromowitz, M.A.3
Moll, J.L.4
-
5
-
-
84934660161
-
Design and characteristics of lightly doped drain-source (LDD) insulated gate field-effect transistor
-
S. Ogura, P. J. Tsang, W. W. Walker, D. L. Critchlow, and J. F. Shepard, “Design and characteristics of lightly doped drain-source (LDD) insulated gate field-effect transistor,” IEEE J. Solid-State Circuits, vol. SC-15, p. 424, 1980.
-
(1980)
IEEE J. Solid-State Circuits
, vol.SC-15
, pp. 424
-
-
Ogura, S.1
Tsang, P.J.2
Walker, W.W.3
Critchlow, D.L.4
Shepard, J.F.5
-
6
-
-
0019047198
-
Quadruply self-aligned MOS (QSA MOS)-A new short-channel highspeed high-density MOSFET for VLSI
-
K. Ohta, K. Yamada, M. Saitoh, K. Shimizu, and Y. Tarui, “Quadruply self-aligned MOS (QSA MOS)-A new short-channel highspeed high-density MOSFET for VLSI,” IEEE Trans. Electron Devices, vol. ED-27, p. 1352, 1980.
-
(1980)
IEEE Trans. Electron Devices
, vol.ED-27
, pp. 1352
-
-
Ohta, K.1
Yamada, K.2
Saitoh, M.3
Shimizu, K.4
Tarui, Y.5
-
7
-
-
0021489601
-
Source-and-drain series resistance of LDD MOSFET's
-
B. J. Sheu, C. Hu, P. K. Ko, and F. C. Hsu, “Source-and-drain series resistance of LDD MOSFET's,” IEEE Electron Device Lett., vol. EDL-5, p. 365, 1984.
-
(1984)
IEEE Electron Device Lett.
, vol.EDL-5
, pp. 365
-
-
Sheu, B.J.1
Hu, C.2
Ko, P.K.3
Hsu, F.C.4
-
8
-
-
0019713533
-
Use of process and 2-D MOS simulation in the study of doping profile influence on S/D resistance in short channel MOSFET's
-
P. Antognetti, C. Lombardi, and D. Antoniadis, “Use of process and 2-D MOS simulation in the study of doping profile influence on S/D resistance in short channel MOSFET's,” in IEDM Tech Dig., p. 574, 1981.
-
(1981)
IEDM Tech Dig.
, pp. 574
-
-
Antognetti, P.1
Lombardi, C.2
Antoniadis, D.3
-
9
-
-
0021517434
-
Source and drain resistance determination for MOSFET's
-
M. H. Seavey, “Source and drain resistance determination for MOSFET's,” IEEE Electron Device Lett., vol. EDL-5, p. 479, 1984.
-
(1984)
IEEE Electron Device Lett.
, vol.EDL-5
, pp. 479
-
-
Seavey, M.H.1
-
10
-
-
0022046260
-
Geometry effects in MOSFET channel length extraction algorithms
-
M. R. Wordeman, J. Y. C. Sun, and S. E. Laux, “Geometry effects in MOSFET channel length extraction algorithms,” IEEE Electron Device Lett., vol. EDL-6, p. 186, 1985.
-
(1985)
IEEE Electron Device Lett.
, vol.EDL-6
, pp. 186
-
-
Wordeman, M.R.1
Sun, J.Y.C.2
Laux, S.E.3
-
11
-
-
0022862312
-
Channel length and source/drain resistance extraction for conventional and LDD MOSFET's
-
(San Diego, CA), paper II-8
-
C. Chang, G. Hu, and K. Hui, “Channel length and source/drain resistance extraction for conventional and LDD MOSFET's,” in Dig. Symp. VLSI Technol. (San Diego, CA), paper II-8, p. 29, 1986.
-
(1986)
Dig. Symp. VLSI Technol.
, pp. 29
-
-
Chang, C.1
Hu, G.2
Hui, K.3
-
12
-
-
0021482945
-
Accuracy of an effective channel length/external resistance extraction algorithm for MOSFET's
-
S. E. Laux, “Accuracy of an effective channel length/external resistance extraction algorithm for MOSFET's,” IEEE Trans. Electron Devices, vol. ED-31, p. 1245, 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, pp. 1245
-
-
Laux, S.E.1
-
13
-
-
84949083566
-
On the accuracy of channel length characterization of LDD MOSFET's
-
J. Y. C. Sun, M. R. Wordeman, and S. E. Laux, “On the accuracy of channel length characterization of LDD MOSFET's,” IEEE Trans. Electron Devices, vol. ED-33, p. 1556, 1986.
-
(1986)
IEEE Trans. Electron Devices
, vol.ED-33
, pp. 1556
-
-
Sun, J.Y.C.1
Wordeman, M.R.2
Laux, S.E.3
-
14
-
-
0022751618
-
Analysis of the gate-voltage-dependent series resistance of MOSFET's
-
K. K. Ng and W. T. Lynch, “Analysis of the gate-voltage-dependent series resistance of MOSFET's,” IEEE Trans. Electron Devices, vol. ED-33, p. 965, 1986.
-
(1986)
IEEE Trans. Electron Devices
, vol.ED-33
, pp. 965
-
-
Ng, K.K.1
Lynch, W.T.2
|