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Volumn 34, Issue 12, 1987, Pages 2469-2475

Gate-Voltage-Dependent Effective Channel Length and Series Resistance of LDD MOSFET's

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EID: 84907801823     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23337     Document Type: Article
Times cited : (98)

References (16)
  • 1
    • 0018468995 scopus 로고
    • A new method to determine effective MOSFET channel length
    • K. Tereda and H. Muta, ' 'A new method to determine effective MOSFET channel length,” Japan. J. Appl. Phys., vol. 18, p. 935, 1979.
    • (1979) Japan. J. Appl. Phys. , vol.18 , pp. 935
    • Tereda, K.1    Muta, H.2
  • 4
    • 0021521674 scopus 로고
    • Basic parameter measurement and channel length broadening effect in submicrometer MOSFET
    • K. L. Peng, S. Y. Oh, M. A. Afromowitz, and J. L. Moll, “Basic parameter measurement and channel length broadening effect in submicrometer MOSFET,” IEEE Electron Device Lett., vol. EDL-5, p. 473, 1984.
    • (1984) IEEE Electron Device Lett. , vol.EDL-5 , pp. 473
    • Peng, K.L.1    Oh, S.Y.2    Afromowitz, M.A.3    Moll, J.L.4
  • 5
    • 84934660161 scopus 로고
    • Design and characteristics of lightly doped drain-source (LDD) insulated gate field-effect transistor
    • S. Ogura, P. J. Tsang, W. W. Walker, D. L. Critchlow, and J. F. Shepard, “Design and characteristics of lightly doped drain-source (LDD) insulated gate field-effect transistor,” IEEE J. Solid-State Circuits, vol. SC-15, p. 424, 1980.
    • (1980) IEEE J. Solid-State Circuits , vol.SC-15 , pp. 424
    • Ogura, S.1    Tsang, P.J.2    Walker, W.W.3    Critchlow, D.L.4    Shepard, J.F.5
  • 6
    • 0019047198 scopus 로고
    • Quadruply self-aligned MOS (QSA MOS)-A new short-channel highspeed high-density MOSFET for VLSI
    • K. Ohta, K. Yamada, M. Saitoh, K. Shimizu, and Y. Tarui, “Quadruply self-aligned MOS (QSA MOS)-A new short-channel highspeed high-density MOSFET for VLSI,” IEEE Trans. Electron Devices, vol. ED-27, p. 1352, 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , pp. 1352
    • Ohta, K.1    Yamada, K.2    Saitoh, M.3    Shimizu, K.4    Tarui, Y.5
  • 7
    • 0021489601 scopus 로고
    • Source-and-drain series resistance of LDD MOSFET's
    • B. J. Sheu, C. Hu, P. K. Ko, and F. C. Hsu, “Source-and-drain series resistance of LDD MOSFET's,” IEEE Electron Device Lett., vol. EDL-5, p. 365, 1984.
    • (1984) IEEE Electron Device Lett. , vol.EDL-5 , pp. 365
    • Sheu, B.J.1    Hu, C.2    Ko, P.K.3    Hsu, F.C.4
  • 8
    • 0019713533 scopus 로고
    • Use of process and 2-D MOS simulation in the study of doping profile influence on S/D resistance in short channel MOSFET's
    • P. Antognetti, C. Lombardi, and D. Antoniadis, “Use of process and 2-D MOS simulation in the study of doping profile influence on S/D resistance in short channel MOSFET's,” in IEDM Tech Dig., p. 574, 1981.
    • (1981) IEDM Tech Dig. , pp. 574
    • Antognetti, P.1    Lombardi, C.2    Antoniadis, D.3
  • 9
    • 0021517434 scopus 로고
    • Source and drain resistance determination for MOSFET's
    • M. H. Seavey, “Source and drain resistance determination for MOSFET's,” IEEE Electron Device Lett., vol. EDL-5, p. 479, 1984.
    • (1984) IEEE Electron Device Lett. , vol.EDL-5 , pp. 479
    • Seavey, M.H.1
  • 10
    • 0022046260 scopus 로고
    • Geometry effects in MOSFET channel length extraction algorithms
    • M. R. Wordeman, J. Y. C. Sun, and S. E. Laux, “Geometry effects in MOSFET channel length extraction algorithms,” IEEE Electron Device Lett., vol. EDL-6, p. 186, 1985.
    • (1985) IEEE Electron Device Lett. , vol.EDL-6 , pp. 186
    • Wordeman, M.R.1    Sun, J.Y.C.2    Laux, S.E.3
  • 11
    • 0022862312 scopus 로고
    • Channel length and source/drain resistance extraction for conventional and LDD MOSFET's
    • (San Diego, CA), paper II-8
    • C. Chang, G. Hu, and K. Hui, “Channel length and source/drain resistance extraction for conventional and LDD MOSFET's,” in Dig. Symp. VLSI Technol. (San Diego, CA), paper II-8, p. 29, 1986.
    • (1986) Dig. Symp. VLSI Technol. , pp. 29
    • Chang, C.1    Hu, G.2    Hui, K.3
  • 12
    • 0021482945 scopus 로고
    • Accuracy of an effective channel length/external resistance extraction algorithm for MOSFET's
    • S. E. Laux, “Accuracy of an effective channel length/external resistance extraction algorithm for MOSFET's,” IEEE Trans. Electron Devices, vol. ED-31, p. 1245, 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 1245
    • Laux, S.E.1
  • 13
    • 84949083566 scopus 로고
    • On the accuracy of channel length characterization of LDD MOSFET's
    • J. Y. C. Sun, M. R. Wordeman, and S. E. Laux, “On the accuracy of channel length characterization of LDD MOSFET's,” IEEE Trans. Electron Devices, vol. ED-33, p. 1556, 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , pp. 1556
    • Sun, J.Y.C.1    Wordeman, M.R.2    Laux, S.E.3
  • 14
    • 0022751618 scopus 로고
    • Analysis of the gate-voltage-dependent series resistance of MOSFET's
    • K. K. Ng and W. T. Lynch, “Analysis of the gate-voltage-dependent series resistance of MOSFET's,” IEEE Trans. Electron Devices, vol. ED-33, p. 965, 1986.
    • (1986) IEEE Trans. Electron Devices , vol.ED-33 , pp. 965
    • Ng, K.K.1    Lynch, W.T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.