Impact of tunnel oxide thickness on erratic erase in flash memories

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 363-366

  Chimenton, Andrea ^a   Olivo, Piero ^a  

^a UNIVERSITY OF FERRARA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGING/DISCHARGING; FOWLER-NORDHEIM; OXIDE THICKNESS; PHYSICAL ASPECTS; TUNNEL OXIDE THICKNESS; TUNNELING OXIDES;

FLASH MEMORY;

EID: 84907708126     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194944     Document Type: Conference Paper

References (8)

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8. F. Nebel,M. Jourdain, "On the correlation between interface defects, positive oxide charge and hole fluence throughout the oxide," J. of Non-Cristalline Solids, vol. 245, pp. 67-72, 1999.