14nm FDSOI technology for high speed and energy efficient applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2014, Pages

  Weber, O ^b   Josse, E ^a   Andrieu, F ^b   Cros, A ^a   Richard, E ^a   Perreau, P ^b   Baylac, E ^a   Degors, N ^c   Gallon, C ^a   Perrin, E ^a   Chhun, S ^a   Petitprez, E ^a   Delmedico, S ^a   Simon, J ^c   Druais, G ^a   Lasserre, S ^c   Mazurier, J ^b   Guillot, N ^a   Bernard, E ^a   Bianchini, R ^a   Parmigiani, L ^a   Gerard, X ^a   Pribat, C ^a   Gourhant, O ^a   Abbate, F ^a   Gaumer, C ^a   Beugin, V ^b   Gouraud, P ^a   Maury, P ^a   Lagrasta, S ^a   Barge, D ^a   Loubet, N ^a   Beneyton, R ^a   Benoit, D ^a   Zoll, S ^a   Chapon, J D ^a   Babaud, L ^a   Bidaud, M ^a   Gregoire, M ^a   Monget, C ^a   Le Gratiet, B ^a   Brun, P ^b   Mellier, M ^a   Pofelski, A ^a   Clement, L R ^a   Bingert, R ^a   Puget, S ^a   Kruck, J F ^a   Hoguet, D ^a   Scheer, P ^a   Poiroux, T ^b   Manceau, J P ^c   Rafik, M ^a   Rideau, D ^a   Jaud, M A ^b   Lacord, J ^a   Monsieur, F ^a   Grenouillet, L ^b   Vinet, M ^b   Liu, Q ^a   Doris, B ^c   Celik, M ^a   Fetterolf, S P ^c   Faynot, O ^b   Haon, M ^a   more..

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c IBM   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; METAL DRAWING; SPEED;

DRIVE CURRENTS; DYNAMIC POWER REDUCTION; ENERGY EFFICIENT; GATE-TO-DRAIN CAPACITANCE; POWER EFFICIENCY; POWER REDUCTIONS; RING OSCILLATOR; SINGLE-PORT SRAM;

ENERGY EFFICIENCY;

EID: 84907692350     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2014.6894343     Document Type: Conference Paper

References (11)

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9. K. Cheng et al., IEDM 2012
10. P. Flatresse et al., ISSCC 2013
11. R. Ranica et al., VLSI 2013.