Simulation of thermal oxidation: A three-dimensional finite element approach

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 383-386

  Hollauer, Christian ^a   Ceric, Hajdin ^a   Selberherr, Siegfried ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

THERMAL OXIDATION; THREE-DIMENSIONAL FINITE ELEMENT APPROACH;

EID: 84907681201     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256894     Document Type: Conference Paper

References (4)

1. S, Zelenka, Stress Related Problems in Process Simulation. PhD thesis, Federal Institute of Technology, Zurich, Switzerland, 2000.
2. E. Rank and U. Weinert, "A Simulation System for Diffuse Oxidation of Silicon: A Two-Dimensional Finite Element Approach," IEEE Transactions on CAD, vol. 9, no, 5, pp. 543-550, 1990.
3. B. E. Deai and A. S. Grove, "General Relationship for the Thermal Oxidation of Silicon," Journal Applied Physics, vol. 36, no. 12, pp. 3770-3778, J965.
4. O. C. Zienkiewicz, The Finite Element Method, vol. 1: Basic Formulation and Linear Problems. Maidenhead, England: McGraw - Hill, 4th ed., 19S7.