Realisation of a 0.1 μm vertical MOSFET with a SiGe source

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 228-231

  Hall, S ^a   Wu, Z Y ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON ALLOYS;

CHANNEL LENGTH; ELECTRICAL CHARACTERISATION; GATE ELECTRODES; LOW- TEMPERATURE PROCESS; ORIENTATION DEPENDENCE; PLASMA OXIDATION; SILICON DEPOSITION; VERTICAL MOSFETS;

MOSFET DEVICES;

EID: 84907541215     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194407     Document Type: Conference Paper

References (3)

1. Z. Y. Wu, S. Hall and W. Eccleston, "Suppression of the parasitic bipolar transistor in dep sub-micron MOSFETs by the use of a narrow band-gap source ", Po. of ESSDERC95, Editions Frontieres, pp. 509-512 (1995)
2. I. S. Gob, J. F. Zhang, S. Hall, W. Eccleston and K. Werer, "Plasma gown oxide on SiGe", Semicon Sci. & Technol. Vol. 10, pp.818-828, (1994)
3. Z. Y. Wu, SiGelSi Heterojuncton: Investigation & Device Applications, Ph.D thesis, University of Liverpool, 1997.