Monte carlo comparative study of current-mode noise in Si/Si1-xGexstrained heterojunctions

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 340-343

  Martin, M J ^b   Pardo, D ^a   Velazquez J E ^a  

^a UNIVERSITY OF SALAMANCA   (Spain)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; GRADING; SILICON; SPECTRAL DENSITY;

COMPARATIVE STUDIES; CURRENT FLUCTUATIONS; CURRENT MODE; GE CONTENT; HOMOJUNCTION; LATTICE TEMPERATURES; LOW-FREQUENCY NOISE; MICROSCOPIC STUDY;

HETEROJUNCTIONS;

EID: 84907538920     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194435     Document Type: Conference Paper

References (4)

1. A. Gruhle, H. Kibbel, U. Erben and E. Kasper, Electron. Lett., 29, 415 (1993
2. M. J. Martin, J. E. Velázquez J.E. and D. Pardo, J. Appl. Phys., 79, 6975 (1996
3. C. G. van de Walle and R. M. Martin, Phys. Rev. B, 34, 5621 (1986
4. S. C. Jain, J. Poortmans, S. S. Iyer, J. J. Loferski, J. Nijs, R. Mertens and R. Van Overstraten, IEEE Trans. Electr. Dev., ED-12, 2338 (1993