Simulation of avalanche injection filamentation in MOSFET's and IGBT's

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 316-319

  Vashchenko, V A ^a   Martynov, Y B ^a   Sinkevitch, V F ^a  

^a Pulsar Institute   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES;

2-D NUMERICAL SIMULATION; AVALANCHE INJECTION; CONDUCTIVITY MODULATION; CRITICAL VOLTAGES; CURRENT FILAMENTATION; CURRENT INSTABILITY; FILAMENTATION; NEGATIVE DIFFERENTIAL RESISTANCES;

DRAIN CURRENT;

EID: 84907515607     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194429     Document Type: Conference Paper

References (5)

1. D.P. Kennedy and A. Phillips, -Int. EIectron. Dev. Meet.-Washington D.C., 1973.
2. T. Asakawa and N. Tsubouchi, -IEEE Trans. on Electron Devices, vol.13, no.11, pp.811-812, 1966.
3. V.A. Vashchenko, N.A. Kozlov, Y.B. Martynov, V.F. Sinkevitch, A.S. Tager, et al IEEE Trans. Elect. Dev., 43, 513, 1996.
4. V.A. Vashchenko, Y.B. Martynov, V.F. Sinkevitch, Sol-St. Electronics, 41, no.1, 75, 1997.
5. V.A. Vashchenko, Y.B. Martynov, V.F. Sinkevitch, A.S. Tager, IEEE Trans. Elect. Dev., ED-43, no.12, 2080, 1996.