Structural improvement of nickel metal-induced-lateral-crystallized silicon films using excimer laser annealing

European Solid-State Device Research Conference

Volumn , Issue , 2001, Pages 123-126

  Miyasaka, M ^a   Makihira, K ^b   Asano, T ^b   Stoemenos, J ^c  

^a SEIKO EPSON CORPORATION   (Japan)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EXCIMER LASER ANNEALING; SILICON FILMS; STRUCTURAL IMPROVEMENTS;

EID: 84907500043     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2001.195216     Document Type: Conference Paper

References (6)

1. K. Makihira and T. Asano, "Enhanced Nucleation of a-Si Solid-Phase Crystallization by Imprint Technology", Dig. of Tech. Papers 1999 Active-Matrix Liquid-Crystal Displays (1999 Tokyo), p. 85-88.
2. K. Makihira and T. Asano, "Single-Grain Thin-Film Transistor Fabricated on Poly-Si Films Prepared by Metal Imprint Technology", Dig. of Tech. Papers 2000 Active-Matrix Liquid-Crystal Displays (2000 Tokyo), p. 33-36.
3. R. Kakkad, G. Liu and S. J. Fonash, "Low Temperature Selective Crystallization of Amorphous Silicon", J. Non-Crystalline Solid, 115, 66-68 (1989).
4. T. H. Ihn, B. I. Lee, K. H. Kim and S. K. Joo, "Fabrication of poly-Si TFT at 450C by Metal Induced Lateral Crystallization", Dig. of Tech. Papers 1996 Active-Matrix Liquid-Crystal Displays (1996 Kobe), p. 13-16.
5. M. Miyasaka and J. Stoemenos "Excimer laser annealing of amorphous and solid-phase-crystallized silicon films", J. Appl. Phys. 86, 5556-5565 (1999).
6. C. Hayzelden and J. L. Batstone, "Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films", J. Appl. Phys. 73, 8279-8289 (1993).