Near-field imaging and spectroscopy of locally strained GaN using an IR broadband laser

Optics Express

Volumn 22, Issue 19, 2014, Pages 22369-22381

  Bensmann, Stefanie ^a   Gaußmann, Fabian ^a   Lewin, Martin ^a   Wüppen, Jochen ^a   Nyga, Sebastian ^a   Janzen, Christoph ^a   Jungbluth, Bernd ^a   Taubner, Thomas ^a,b  

^a FRAUNHOFER INSTITUTE FOR LASER TECHNOLOGY   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; GALLIUM NITRIDE; III-V SEMICONDUCTORS;

2-D VISUALIZATIONS; BROAD-BAND LASERS; GALLIUM NITRIDES (GAN); NEAR FIELD IMAGING; NEAR FIELD SPECTRA; QUALITATIVE CHARACTERIZATION; SPATIAL RESOLUTION; THEORETICAL MODELING;

NEAR FIELD SCANNING OPTICAL MICROSCOPY;

GALLIUM; GALLIUM NITRIDE;

ATOMIC FORCE MICROSCOPY; CHEMISTRY; DEVICES; DIAGNOSTIC IMAGING; EQUIPMENT DESIGN; HUMAN; INFRARED SPECTROPHOTOMETRY; LASER; LIGHT; PHONON; THEORETICAL MODEL;

DIAGNOSTIC IMAGING; EQUIPMENT DESIGN; GALLIUM; HUMANS; LASERS; LIGHT; MICROSCOPY, ATOMIC FORCE; MODELS, THEORETICAL; PHONONS; SPECTROPHOTOMETRY, INFRARED;

EID: 84907481985     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.22.022369     Document Type: Article

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