A theoretical study of fluorographene as substrates for mono-/Bi-layer graphene

AIP Conference Proceedings

Volumn 1566, Issue , 2013, Pages 127-128

  Guo, Zhendong ^a   Fan, Lei ^a   Mei, Lingqi ^a   Xu, Yang ^a   Yu, Bin ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

Fluorographene; gap engineering; screening effect; substrate

Indexed keywords

BORON NITRIDE; DIELECTRIC MATERIALS; ELECTRONIC PROPERTIES; GATE DIELECTRICS; SUBSTRATES;

BILAYER GRAPHENE; DEVICE APPLICATION; ELECTRONIC PROPERTIES OF GRAPHENE; EXTERNAL ELECTRIC FIELD; FLUOROGRAPHENE; SCREENING EFFECT; THEORETICAL STUDY;

GRAPHENE;

EID: 84907332100     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.4848318     Document Type: Conference Paper

References (5)

1. K. J. Jeon, Z. Lee, E. Pollak, L. Moreschini, A. Bostwick, C. M. Park, R. Mendelsberg, V. Radmilovic, R. Kostecki, T. J. Richardson, and E. Rotenberg, ACS Nano 5, 1042 (2011).
2. M. A. Ribas, A. K. Singh, P. B. Sorokin, and B. I. Yakobson, Nano Res. 4, 143 (2011).
3. G. Giovannetti, P. A. Khomyakov, G. Brocks, P. J. Kelly, and J. van den Brink, Phys. Rev. B 76, 073103 (2007).
4. Y. C. Fan, M. W. Zhao, Z. H. Wang, X. J. Zhang, and H. Y. Zhang, Appl. Phys. Lett. 98, 083103 (2011).
5. A. Ramasubrarnaniam, D. Naveh, and E. Towe, Nano Lett. 11, 1070 (2011).