Guidelines and limitations for the design of high-efficiency InGaN single-junction solar cells

Solar Energy Materials and Solar Cells

Volumn 130, Issue , 2014, Pages 354-363

  Fabien, Chloe A M ^a   Doolittle, W Alan ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Device modeling; Heterojunction; Homojunction; InGaN; Polarization

Indexed keywords

CONVERSION EFFICIENCY; HETEROJUNCTIONS; INDIUM; INDIUM ALLOYS; OPEN CIRCUIT VOLTAGE; POLARIZATION; STRUCTURAL OPTIMIZATION;

DEVICE MODELING; HETEROJUNCTION SOLAR CELLS; HOMOJUNCTION; INGAN; LONGER WAVELENGTH ABSORPTIONS; MINORITY CARRIER LIFETIMES; SINGLE JUNCTION SOLAR CELLS; SURFACE RECOMBINATION VELOCITIES; HIGH-EFFICIENCY;

SOLAR CELLS; HETEROJUNCTIONS;

EID: 84907216694     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2014.07.018     Document Type: Article

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