Room-temperature wafer bonding with smooth Au thin film in ambient air using Ar RF plasma activation

Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014

Volumn , Issue , 2014, Pages 26-

  Okumura, Ken ^a   Higurashi, Eiji ^a   Suga, Tadatomo ^a   Hagiwara, Kei ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ACTIVATION; GLASS; HIGH POWER LASERS; PLASMA THEORY; QUARTZ; SILICON CARBIDE; SURFACE ROUGHNESS; TEMPERATURE; THREE DIMENSIONAL INTEGRATED CIRCUITS; WAFER BONDING; WAVE PLASMA INTERACTIONS;

AMBIENT AIR; AU THIN FILMS; GLASS WAFER; HETEROGENEOUS INTEGRATION; HIGH POWER SEMICONDUCTOR LASER; QUARTZ GLASS; RF PLASMA; ROOM TEMPERATURE;

BONDING;

EID: 84906974792     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/LTB-3D.2014.6886165     Document Type: Conference Paper

References (2)

1. E. Higurashi, K. Nakasuji, and T. Suga, Room-Temperature Direct Bonding of GaAs and SiC Wafers for Improved Heat Dissipation in High-Power Semiconductor Lasers, Proc. International Conference on Electronics Packaging (ICEP 2013), 2013, pp. 350-354.
2. T. Shimatsu, M. Uomoto, K. Oba, and Y. Furukata, Atomic Diffusion Bonding of Wafers in Air with Thin Au Films and Its Application to Optical Devices Fabrication, Proc. 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), 2012, p. 103.