Temperature dependence of the energy bandgap of two-dimensional hexagonal boron nitride probed by excitonic photoluminescence

Journal of Applied Physics

Volumn 115, Issue 5, 2014, Pages

  Du, X Z ^a   Fyre, C D ^b   Edgar, J H ^b   Lin, J Y ^a   Jiang, H X ^a  

^a Department of Electrical and Computer Engineering   (United States)

^b Sunflower Networking Group   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; BINDING ENERGY; BLUE SHIFT; BORON NITRIDE; CRYSTALS; ELECTROMAGNETIC WAVE EMISSION; ENERGY GAP; III-V SEMICONDUCTORS; NANOTUBES; NITRIDES; SEMICONDUCTOR QUANTUM WELLS;

EXCITON-BINDING ENERGY; EXCITONIC PHOTOLUMINESCENCE; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); LONGITUDINAL OPTICAL PHONONS; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL (2D) SYSTEMS;

TEMPERATURE DISTRIBUTION;

EID: 84906877571     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4863823     Document Type: Article

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