Comparison of polysiloxane films substituted by undecenyl-cyclam and by naphthyl-cyclam for the design of ISFET devices sensitive to Fe3+ ions

Sensors and Actuators, B: Chemical

Volumn 204, Issue , 2014, Pages 723-733

  Mefteh, Wahid Ben ^a,b   Touzi, Hassen ^c   Chevalier, Yves ^d   Ouada, Hafedh Ben ^c   Othmane, Ali ^e   Kalfat, Rafik ^a   Jaffrezic Renault, Nicole ^b  

^a Institut National de Recherche et d'Analyse Physico Chimique Tunis   (Tunisia)

^b UNIVERSITÉ LYON 1   (France)

^c UNIVERSITY OF MONASTIR   (Tunisia)

^d UNIVERSITÉ LYON 1   (France)

^e UNIVERSITY OF MONASTIR   (Tunisia)

Author keywords

Cyclam; Hydrosilylation; Iron(III); ISFET device; Polymethylhydrosiloxane

Indexed keywords

BOND STRENGTH (CHEMICAL); FILM PREPARATION; FUNCTIONAL MATERIALS; GRAFTING (CHEMICAL); HYDROSILYLATION; ION SENSITIVE FIELD EFFECT TRANSISTORS; IONOPHORES; IONS; IRON COMPOUNDS; MATERIALS PROPERTIES; MICROCHANNELS; NAPHTHALENE; ORGANIC POLYMERS;

COMPLEXING PROPERTIES; CYCLAM; ELECTROCHEMICAL DEVICES; ELECTROLYTEINSULATOR-SEMICONDUCTOR (EIS); POLIES (METHYLHYDROSILOXANE); POLYMETHYLHYDROSILOXANES; PREPARATION PROCESS; SENSITIVE MATERIALS; POLYSILOXANE FILMS;

SILICONES; HYDROSILYLATION;

EID: 84906872080     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2014.07.129     Document Type: Article

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