Power electronic devices in the future

IEEE Journal of Emerging and Selected Topics in Power Electronics

Volumn 1, Issue 1, 2013, Pages 11-17

  Hudgins, Jerry L ^a  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

Carbon nanotubes; Diamond; Gallium nitride (GaN); Power semiconductor devices; Silicon carbide (SiC); Wide band gap semiconductors

Indexed keywords

CARBON; CARBON NANOTUBES; DIAMONDS; ELECTRIC POWER SYSTEMS; ELECTRON DEVICES; ELECTRONIC EQUIPMENT; ENERGY GAP; GALLIUM NITRIDE; NANOTUBES; NITRIDES; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SILICON; SILICON CARBIDE; THERMOELECTRIC EQUIPMENT; WIDE BAND GAP SEMICONDUCTORS; YARN;

GALLIUM NITRIDES (GAN); MATERIAL DEVELOPMENT; POWER DEVICES; POWER ELECTRONIC DEVICES; SILICON CARBIDES (SIC); WIDE-BAND-GAP;

POWER SEMICONDUCTOR DEVICES;

EID: 84906812762     PISSN: 21686777     EISSN: 21686785     Source Type: Journal    
DOI: 10.1109/JESTPE.2013.2260594     Document Type: Article

References (74)

1. W. M. Haynes, CRC Handbook of Chemistry and Physics, 93rd ed. Cleveland, OH, USA: CRC Press, 2012.
2. M. Held, P. Jacob, G. Nicoletti, P. Scacco, and M. H. Poech, "Fast power cycling test for IGBT modules in traction application," in Proc. IEEE Power Electron. Drive Syst. Conf., May 1997, pp. 425-430.
3. F. Auerbach and A. Lenniger, "Power-cycling-stability of IGBT modules," in Proc. 32nd IAS IEEE Annu. Meeting Conf. Rec. Ind. Appl. Conf., Vol. 2. Oct. 1997, pp. 1248-1252.
4. S. Yang, D. Xiang, A. Bryant, P. Mawby, L. Ran, and P. Tavner, "Condition monitoring for device reliability in power electronic converters - a review," IEEE Trans. Power Electron., Vol. 25, no. 11, pp. 2734-2752, Nov. 2010.
5. X. Ma, "Superscrew dislocations in silicon carbide: Dissociation, aggregation, and formation," J. Appl. Phys., Vol. 99, no. 6, pp. 063513-1-063513-6, 2006.
6. N. Ohtani, M. Katsuno, H. Tsuge, T. Fujimoto, M. Nakabayashi, H. Yashiro, M. Sawamura, T. Aigo, and T. Hoshino, "Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals," J. Cryst. Growth, Vol. 286, no. 1, pp. 55-60, 2006.
7. S. I. Maximenko, J. A. Freitas, Jr., R. L. Myers-Ward, K. K. Lew, B. L. VanMil, C. R. Eddy, Jr., D. K. Gaskill, P. G. Muzykov, and T. S. Sudarshan, "Effect of threading screw and edge dislocations on transport properties of 4H-SiC homoepitaxial layers," J. Appl. Phys., Vol. 108, no. 1, pp. 013708-1-0137086, 2010.
8. M. K. Das, "Commercially available Cree silicon carbide power devices: Historical success of JBS diodes and future power switch prospects," in Proc. CS MANTECH Conf., 2011, pp. 1-2.
9. L. Lorenz, "Power semiconductors development trends," in Proc. IEEE 5th Int. Power Electron. Motion Control Conf., Aug. 2006, pp. 1-7.
10. L. Lorenz, "Power semiconductor devices-development trends and system interactions," in Proc. IEEE Power Convers. Conf., Apr. 2007, pp. 348-354.
11. A. Nakagawa, "Theoretical investigation of silicon limit characteristics of IGBT," in Proc. IEEE Int. Symp. Power Semicond. Devices, Jun. 2006, pp. 5-8.
12. M. Antoniou, F. Udrea, and F. Bauer, "Optimisation of superjunction bipolar transistor for ultra-fast switching applications," in Proc. IEEE 19th Int. Symp. Power Semicond. Devices, May 2007, pp. 101-104.
13. H. Iwamoto, K. Satoh, M. Yamamoto, and A. Kawakami, "High-power semiconductor device: A symmetric gate commutated turn-off thyristor," IEEE Proc. Electr. Power Appl., Vol. 148, no. 4, pp. 363-368, Jul. 2001.
14. N. R. Zargari, "A new current source converter using a symmetric gate commutated thyristor (SGCT)," IEEE Trans. Ind. Appl., Vol. 37, no. 3, pp. 896-903, May-Jun. 2001.
15. Y. S. Zhou, W. Xiong, J. Park, M. Qian, M. Mahjouri-Samani, Y. Gao, L. Jiang, and Y Lu, "Laser assisted nanofabrication of carbon nanostructures," J. Laser Appl., Vol. 24, no. 4, pp. 042007-1-042007-19, Jul. 2012.
16. J. L. Hudgins and R. DeDoncker, "Power semiconductor devices for high power variable speed drives," IEEE Ind. Appl. Mag., Vol. 18, no. 4, pp. 18-25, Jul.-Aug. 2012.
17. N. Shimizu, H. Takahashi, and K. Kumada, "V-series intelligent power modules," Fuji Electr. Rev., Vol. 56, no. 2, pp. 60-64, 2010.
18. F. Wakeman, G. Lockwood, M. Davies, and K. Billet, "Pressure contact IGBT, the ideal switch for high power applications," in Proc. 34th IAS Annu. Meeting Rec, Vol. 1. Oct. 1999, pp. 700-707.
19. F. Wakeman, W. Findlay, and L. Gangru, "Press-pack IGBTs, semiconductor switches for pulsed power," in Proc. Dig. Papers Pulsed Power Plasma Sci., Vol. 2. 2001, pp. 1051-1054.
20. S. Kaufmann, T. Lang, and R. Chokhawala, "Innovative press pack modules for high power IGBTs," in Proc. 13th Int. Symp. Power Semicond. Devices ICs, 2001, pp. 59-62.
21. F Wakeman, D. Hemmings, W Findlay, and G. Lockwood, Pressure Contact IGBT, Testing for Reliability. The Switzerland, IXYS Corp., 2002.
22. H. Zeller, "High power components from the state of the art to future trends," in Proc. Power Convers., May 1998, pp. 1-10.
23. I. Nistor, T. Wikström, and M. Scheinert, "IGCTs: High-power technology for power electronics applications," in Proc. IEEE Int. Semicond. Conf., Vol. 1. Oct. 2009, pp. 65-73.
24. P. Köllensperger and R. W. De Doncker, "The internally commutated thyristor - a new GCT with integrated turn-off unit," in Proc. Conf. Integr. Power Electron. Syst., Jun. 2006, pp. 1-6.
25. P. Köllensperger and R. W. De Doncker, "Optimized gate drivers for internally commutated thyristors (ICTs)," IEEE Trans. Ind. Appl., Vol. 45, no. 2, pp. 836-842, Mar.-Apr. 2009.
26. J. N. Shenoy, J. A. Cooper, and M. R. Melloch, "High-voltage double implanted power MOSFETs in 6H-SiC," IEEE Electron Device Lett, Vol. 18, no. 3, pp. 93-95, Mar. 1997.
27. A. Alok, E. Arnold, R. Egloff, J. Barone, J. Murphy, R. Conrad, and J. Burke, "4H-SiC RF power MOSFET," IEEE Electron Device Lett, Vol. 22, no. 12, pp. 557-578, Dec. 2001.
28. S. Ryu, C. Jonas, B. Heath, J. Richmond, A. Agarwal, and J. Palmour, "950V, 8.7 mohm-cm2 high speed 4H-SiC power DMOSFETs," Mater. Res. Soc. Spring Meeting Proc, Vol. 911, pp. 391-400, Jan. 2006.
29. M. Matin, A. Saha, and J. A. Cooper, Jr., "A self-aligned process for high voltage, short-channel vertical DMOSFETs in 4H-SiC," IEEE Trans. Electron Devices, Vol. 51, no. 10, pp. 1721-1725, Oct. 2004.
30. A. Saha, and J. A. Cooper, "A 1-kV 4H-SiC power DMOSFET optimized for low on-resistance," IEEE Trans. Electron Devices, Vol. 54, no. 10, pp. 2786-2791, Oct. 2007.
31. A. K. Agarwal, J. B. Casady, L. B. Rowland, W. F Valek, M. H. White, and C. D. Brandt, "1.1kV 4H-SiC power UMOSFET's," IEEE Electron Device Letters, Vol. 18, no. 12, pp. 586-588, Dec. 1997.
32. K. Fujihira, N. Miura, T. Watanabe, Y Nakao, N. Yutani, K. Ohtsuka, M. Imaizumi, T. Takami, and T. Oomori, "Realization of low on-resistance 4H-SiC power MOSFETs by using retrograde profile in P-body," Mater. Sci. Forum, Vols. 556-557, pp. 827-830, Sep. 2007.
33. Y Sugawara and L. Asano, "1.4 kV 4H-SiC UMOSFET with low specific on-resistance," in Proc. IEEE Int. Symp. Power Semicond. Devices ICs, Jun. 1998, pp. 119-122.
34. 2, 1.6 kV power DiMOSFETs in 4H-SiC," in Proc. IEEE Int. Symp. Power Semicond. Devices ICs, Sep. 2002, pp. 65-68.
35. 2, 1.8 kV 4H-SiC DMOSFETs," Mater. Sci. Forum, Vols. 527-529, no. 2, pp. 1261-1264, 2006.
36. S. H. Ryu, S. Krishnaswami, M. Das, B. Hull, J. Richmond, B. Heath, A. Agarwal, J. Palmour, and J. Richmond, "10.3 mohm-cm2, 2 kV power DMOSFETs in 4H-SiC," in Proc. IEEE Int. Symp. Power Semicond. Devices ICs, Feb. 2005, pp. 275-278.
37. J. Spitz, M. R. Melloch, J. A. Cooper, Jr., and M. A. Capano, "2.6 kV 4H-Sic lateral DMOSFET's," IEEE Electron Device Lett, Vol. 19, no. 4, pp. 100-102, Apr. 1988.
38. Y Li, J. A. Cooper, and M. A. Capano, "High-voltage (3 kV) UMOS-FETs in 4H-SiC," IEEE Trans. Electron Devices, Vol. 49, no. 6, pp. 972-975, Jun. 2002.
39. S. H. Ryu, S. Krishnaswami, A. Agarwal, J. Richmond, and J. Palmour, "Development of 10 kV 4H-SiC power DMOSFETs," Mater. Sci. Forum, Vols. 457-460, pp. 1385-1388, Jun. 2004.
40. H. Robert, S. Buchoff, S. Van Campen, T. McNutt, A. Ezis, B. Bettina, C. Kirby, M. Sherwin, R. Clarke, and R. Singh, "A 10-kV large-area 4H-SiC power DMOSFET with stable subthreshold behavior independent of temperature," IEEE Trans. Electron Devices, Vol. 55, no. 8, pp. 1807-1815, Aug. 2008.
41. S. H. Ryu, S. Krishnaswami, M. Das, J. Richmond, A. Agarwal, J. Palmour, and J. Scofield, "10 kV 123 mΩcm2 4H-SiC power DMOSFETs," IEEE Electron Device Lett., Vol. 25, no. 8, pp. 556-558, Feb. 2004.
42. S. H. Ryu, S. Krishnaswami, B. Hull, J. Richmond, A. Agarwal, and A. Hefner, "10 kV, 5A 4H-SiC Power DMOSFET," in Proc. IEEE Int. Symp. Power Semicond. Devices ICs, Jun. 2006, pp. 1-4.
43. Y. Sui, T. Tsuji, and J. A. Cooper, Jr., "On-state characteristics of SiC power UMOSFETs on 115-μm drift layers," IEEE Electron Device Lett., Vol. 26, no. 4, pp. 255-257, Apr. 2005.
44. P. Friedrichs, H. Mitlehner, R. Schorner, K. O. Dohnke, R. Elpelt, and D. Stephani, "The vertical silicon carbide JFET-a fast and low loss solid state power switching device," in Proc. Eur. Power Electron. Conf., 2001, pp. 1-7.
45. P. Friedrichs, H. Mitlehner, R. Schorner, K. O. Dohnke, R. Elpelt, and D. Stephani, "Stacked high voltage switch based on SiC VJFETs," in Proc. IEEE Int. Symp. Power Semicond. Devices ICs, Apr. 2003, pp. 139-142.
46. K. Asano, Y. Sugawara, T. Hayashi, S. Ryu, R. Singh, J. Palmour, and D. Takayama, "5kV 4H-SiC SEJFET with low Ron of 69 m-cm2," in Proc. IEEE Int. Symp. Power Semicond. Devices ICs, Jan. 2002, pp. 61-64.
47. J. Wua, J. Hua, J.H. Zhao, X. Wang, X. Li, L. Fursin, and T. Burke, "Normally-off 4H-SiC trench-gate MOSFETs with high mobility," Solid-State Electron., Vol. 52, no. 6, pp. 909-913, 2008.
48. P. Friedrichs, H. Mitlehner, R. Schorner, K. O. Dohnke, R. Elpelt, and D. Stephani, "High voltage, modular switch based on SiC VJFETs-first results for a fast 4.5kV/1.2 Ohm configuration," in Proc. ECSCRM, 2002, pp. 1-5.
49. Q. Zhang, H. R. Chang, M. Gomez, C. Bui, E. Hanna, J. A. Higgins, T. I. Smith, and J. R. Williams, "10 kV trench gate IGBTs on 4H-SiC," in Proc. IEEE Int. Symp. Power Semicond. Devices ICs, May 2005, pp. 303-306.
50. Q. Zhang, C. Jonas, J. Sumakeris, A. Agarwal, and J. Palmour, "12 kV 4H-SiC p-IGBTs with record low specific on-resistance," in Proc. Int. Conf. Silicon Carbide Rel. Mater, 2007, pp. 1187-1190.
51. M. Das, Q. Zhang, R. Callanan, C. Capell, J. Claytou, M. Donfrio, S. Haney, F. Husna, C. Jonas, J. Richmond, and J. J. Sumakeris, "A 13 kV 4H-SiC N-channel IGBT with low Rdiff, on and fast switching," in Proc. Int. Conf. Silicon Carbide Rel. Mater, 2007, pp. 1-6.
52. A. K. Agarwal, J. B. Casady, L. B. Rowland, S. Seshadri, R. R. Siergiej, W. F. Valek, and C. D. Brandt, "700-V asymmetrical 4H-SiC gate turn-off thyristors (GTOs)," IEEE Electron Device Lett., Vol. 18, no. 11, pp. 518-520, Nov. 1997.
53. A. K. Agarwal, B. Damsky, J. Richmond, S. Krishnaswami, C. Capell, S. H. Ryu, and J. W. Palmour, "The first demonstration of the 1 cm × 1 cm SiC thyristor chip," in Proc. IEEE Int. Symp. Power Semicond. Devices ICs, Oct. 2005, pp. 195-198.
54. A. K. Agarwal, S. H. Ryu, R. Singh, O. Kordina, and J. W. Palmourl, "2600 V, 12 A, 4H-SiC, asymmetricalgate turn-off (GTO) thyristor development," Mater. Sci. Forum, Vols. 338-342, pp. 1387-1390, Jan. 2002.
55. S. V. Campen, A. Ezis, J. Zingaro, G. Storaska, R. C. Clarke, V. Temple, M. Thompson, and T. Hansen, "7 kV 4H-SiC GTO thyristors," in Proc. Mater. Res. Soc, Vol. 742. Nov. 2002, pp. 1-10.
56. J. Wang and A. Q. Huang, "Design and characterization of high-voltage silicon carbide emitter turn-off thyristor," IEEE Trans. Power Electron., Vol. 24, no. 5, pp. 1189-1197, May 2004.
57. G. Paques, S. Scharnholz, N. Dheilly, D. Planson, and R. W. DeDoncker, "High-voltage 4H-SiC thyristors with a graded etched junction termination extension," IEEE Electron Device Lett., Vol. 32, no. 10, pp. 1421-1423, Oct. 2011.
58. Y Sugawara, D. Takayama, K. Asano, A. Agarwal, S. Ryu, J. Palmour, and S. Ogata, "12.7 kV ultra high voltage SiC commutated gate turn-off thyristor: SICGT," in Proc. IEEE Int. Symp. Power Semicond. Devices ICs, May 2004 pp. 365-368.
59. S. Dargahi and S. S. Williamson, "On the suitability of gallium-nitride (GaN) based automotive power electronics," in Proc. IEEE Vehicle Power Propuls. Conf, Sep. 2010, pp. 1-6.
60. T. Kachi, M. Kanechika, and T. Ugesugi, "Automotive Applications of GaN Power Devices," in Proc. Compound Semicond. Integr. Circuit Symp., 2011, pp. 1-3.
61. B. L. Swenson, U. K. Mishra, and S. Chowdhury, "Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer," IEEE Electron Device Lett., Vol. 29, no. 6, pp. 543-545, Jun. 2008.
62. T. Kachi, D. Kikuta, and T. Uesugi, "GaN power device and reliability for automotive applications," in Proc. Rel. Phys. Symp., Apr. 2012, pp. 3D.1.1-3D.1.4.
63. J. L. Hudgins, "Wide and narrow bandgap semiconductors for power electronics," IEEE/TMMS J. Electron. Mater., Vol. 32, no. 6, pp. 471-477, Jun. 2003.
64. J. Millán, "Wide band-gap power semiconductor devices," IET Circuits Devices Syst., Vol. 1, no. 5, pp. 372-379, Oct. 2007.
65. D. J. Twitchen, A. J. Whitehead, S. E. Coe, J. Isberg, J. Hammersberg, T. Wikström, and E. Johansson, "High-voltage single-crystal diamond diodes," IEEE Trans. Electron Devices, Vol. 51, no. 5, pp. 826-828, May 2004.
66. K. Hirama, T. Koshiba, K. Takayanagi, S. Yamauchi, M. Satoh, and H. Kawarada, "RF diamond MISFETs using surface accumulation layer," in Proc. IEEE Int. Symp. Power Semicond. Devices ICs, Jun. 2006, pp. 69-72.
67. W. P. Kang, J. L. Davidson, A. Wisitsora-at, Y. M. Wong, R. Takalkar, K. Holmes, and D. V. Kerns, "Diamond vacuum field emission devices," Diamond Rel. Mater., Vol. 13, pp. 1944-1948, Sep. 2004.
68. L. C. Chen, C. K. Chen, S. L. Wei, D. M. Bhusari, K. H. Chen, Y. F. Chen, Y. C. Jong, and Y. S. Huang, "Crystalline silicon carbon nitride: A wide band gap semiconductor," Appl. Phys. Lett., Vol. 72, no. 19, pp. 2463-2465, May 1998.
69. Y. Miyajima, M. Shkunov, and S. R. P. Silva, "Amorphous carbon and carbon nitride bottom gate thin film transistors," Appl. Phys. Lett., Vol. 95, pp. 102102-1-102102-3, Aug. 2009.
70. X. W. Zhang, H. G. Boyen, N. Deyneka, P. Ziemann, F. Banhart, and M. Schreck, "Epitaxy of cubic boron nitride on (001)-oriented diamond," Nature Mater., Vol. 2, no. 5, pp. 312-315, 2003.
71. O. Mishima, J. Tanaka, S. Yamaoka, and O. Fukunaga, "High-temperature cubic boron nitride p-n junction diode made at high pressure," Science, Vol. 238, pp. 181-183, Oct. 1987.
72. K. Watanabe, T. Taniguchi, and H. Kanda, "Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal," Nature Mater., Vol. 3, pp. 404-409, Jun. 2004.
73. D. J. Perelo, W. J. Yu, D. J. Bae, S. J. Chae, M. J. Kim, Y. H. Lee, and M. Yun, "Analysis of hopping conduction in semiconducting and metallic carbon nanotube devices," J. Appl. Phys., Vol. 105, no. 12, pp. 124309-1-124309-5, 2009.
74. Y. Oganessian, "Nuclei in the 'island of stability' of superheavy elements," J. Phys. Series, Vol. 337, no. 1, p. 012005, 2012.