Thermal Ta2O5 - Alternative to SiO2 for high density dynamic memories

2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings

Volumn 2, Issue , 2002, Pages 709-712

  Atanassova, E ^a   Spassov, D ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; MICROELECTRONICS; SILICON;

BOND DEFECTS; DYNAMIC MEMORY; EQUIVALENT THICKNESS; HIGH QUALITY; INTERFACE TRANSITIONS; STRUCTURAL AND ELECTRICAL PROPERTIES; TANTALUM PENTOXIDE; THERMAL OXIDATION;

TANTALUM OXIDES;

EID: 84906655918     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIEL.2002.1003356     Document Type: Conference Paper

References (7)

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