Ambipolar phosphorene field-effect transistors with dielectric capping

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2014, Pages 201-202

  Liu, Han ^a   Neal, Adam T ^a   Ye, Peide D ^a  

^a Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR BEHAVIOR; DIELECTRIC CAPPING; DIELECTRIC INTEGRATION; DIRECT BAND GAP; METAL CONTACTS; ON-CURRENTS; OPTOELECTRONIC APPLICATIONS; SCHOTTKY BARRIER HEIGHTS;

FIELD EFFECT TRANSISTORS;

EID: 84906537174     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2014.6872367     Document Type: Conference Paper

References (4)

1. H. Liu et al, arXiv:1401.4133 (2014)
2. L. Li et al, Nat. Nanotechnol. in press (2014)
3. F. Xia et al, arXiv:1402.0270 (2014)
4. J. Qiao et al, arXiv:1401:5045 (2014)