CMOS image sensor: Process impact on dark current

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2014, Pages

  Carrere, J P ^a   Place, S ^a   Oddou, J P ^a   Benoit, D ^a   Roy, F ^a  

^a FTM Technology RandD STMicrolelectronics   (France)

Author keywords

Blemish pixel; CMOS Image sensor; Dark current; Deep UV; Holes collection pixel; Interface states engineering; P type pixel; Plasma Induced Damage; SRH generation

Indexed keywords

DARK CURRENTS; DEFECTS; DIGITAL CAMERAS; ELECTRIC FIELDS; INTERFACE STATES; PHASE INTERFACES;

CMOS IMAGE SENSOR; DEEP UV; P-TYPE; PLASMA INDUCED DAMAGE; SRH GENERATION;

PIXELS;

EID: 84905655999     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2014.6860620     Document Type: Conference Paper

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