Characterization of semiconductor materials using synchrotron radiation-based near-field infrared microscopy and nano-FTIR spectroscopy

Optics Express

Volumn 22, Issue 15, 2014, Pages 17948-17958

  Hermann, Peter ^a   Hoehl, Arne ^a   Ulrich, Georg ^b   Fleischmann, Claudia ^c   Hermelink, Antje ^d   Kästner, Bernd ^a   Patoka, Piotr ^b   Hornemann, Andrea ^a   Beckhoff, Burkhard ^a   Rühl, Eckart ^b   Ulm, Gerhard ^a  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^b FREIE UNIVERSITÄT BERLIN   (Germany)

^c IMEC   (Belgium)

^d ROBERT KOCH INSTITUTE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; EMISSION SPECTROSCOPY; IMAGE RECONSTRUCTION; LIGHT SOURCES; RADIATION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SILICON CARBIDE; SYNCHROTRON RADIATION; DIGITAL STORAGE; FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; STORAGE RINGS; SYNCHROTRONS;

ELECTRON STORAGE RING; HIGH-RESOLUTION IMAGING; OPTICAL INFORMATION; SCATTERING-TYPE NEAR-FIELD OPTICAL MICROSCOPY; SEMICONDUCTING MATERIALS; SEMICONDUCTOR TECHNOLOGY; SPECTROSCOPIC MATERIALS; SYNCHROTRON RADIATION SOURCE; NEAR FIELD INFRARED MICROSCOPIES;

FOURIER TRANSFORM INFRARED SPECTROSCOPY;

EID: 84905385480     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.22.017948     Document Type: Article

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