Sn doped In2O3 nanowires for enhanced photocurrent generation for photoelectrodes

Ceramics International

Volumn 40, Issue 8 PART A, 2014, Pages 11727-11733

  Park, Kyung Soo ^a,b   Lee, Chan Gi ^a   Hong, Hyun Seon ^a   Lee, Il Seuk ^c   Kwon, S Joon ^b   Park, Jae Gwan ^b  

^a Institute for Advanced Engineering (IAE)   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c Korea Institute of Industrial Technology   (South Korea)

Author keywords

Conductivity; Crystallinity; ITO nanowire electrode; Photocurrent generation; Surface area

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRODES; TIN;

CRYSTALLINITIES; ELECTRICAL CONDUCTIVITY; ITO NANOWIRES; PHOTOCURRENT GENERATIONS; SUBSTRATE TEMPERATURE; SURFACE AREA; THERMAL CO-EVAPORATION; THREE ORDERS OF MAGNITUDE;

NANOWIRES;

EID: 84903892778     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2014.03.186     Document Type: Article

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