Rapid Thermal MOCVD Processing for InP-Based Devices

Rapid Thermal Processing for Future Semiconductor Devices

Volumn , Issue , 2003, Pages 99-106

  Kreinin, Oleg ^a   Bahir, Gad ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; INCANDESCENT LAMPS; INTEGRATED CIRCUITS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROELECTRONICS; ORGANIC CHEMICALS; ORGANIC LASERS; ORGANOMETALLICS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH;

CONTROL LAYERS; EFFECTIVE TOOL; INORGANIC PHOSPHORUS; MICROELECTRONICS INDUSTRY; PRE-PROCESSING; SELECTIVE AREA EPITAXY; SEMICONDUCTOR FILMS; SUBSTRATE TEMPERATURE;

IN SITU PROCESSING;

EID: 84903663176     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1016/B978-044451339-7/50014-3     Document Type: Chapter

References (6)

1. Feingold A., Katz A. Mateials Science and Enging. 1994, R13(No. 2):57.
2. Kreinin O., Bahir G. IPPRM 1999 Proc. 1999, 59.
3. Bhat R., et al. J. Crystal Growth 1991, 107:871.
4. Kreinin O., Bahir G. IPPRM 2001 Proc. 2001, 401.
5. Bahir G., Merz J.L., Abelson J.R., Sigmon T.W. J.Appl. Phys. 1989, 65:149.
6. Peatron S.J., Chakrabarti U.K. Indium Phosphide and Related materials 1992, 211. Artech House, New York.