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Volumn 112, Issue 25, 2014, Pages

Ab initio study of hot carriers in the first picosecond after sunlight absorption in silicon

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHARACTERIZATION; SILICON;

EID: 84903550782     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.112.257402     Document Type: Article
Times cited : (284)

References (41)
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    • For the (Equation presented) calculations, the paratec code was employed for the ground-state DFT-LDA calculation, and we used the "one shot" (Equation presented) approximation. While a fine sampling of the BZ was found to be essential to convergence the (Equation presented)-ph self-energy, an (Equation presented) grid was sufficient to converge the (Equation presented) (Equation presented)-(Equation presented) self-energy.
    • For the (Equation presented) calculations, the paratec code was employed for the ground-state DFT-LDA calculation, and we used the "one shot" (Equation presented) approximation. While a fine sampling of the BZ was found to be essential to convergence the (Equation presented)-ph self-energy, an (Equation presented) grid was sufficient to converge the (Equation presented) (Equation presented)-(Equation presented) self-energy.
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    • We remark that the large MFPs of (Equation presented) found at energy within 60 meV of the VBM and CBM should be disregarded, as they are a consequence of our approximations, as discussed above.
    • We remark that the large MFPs of (Equation presented) found at energy within 60 meV of the VBM and CBM should be disregarded, as they are a consequence of our approximations, as discussed above.
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    • Our choice for the hot carrier density constitutes an upper limit under AM 1.5 illumination, as obtained by combining a carrier optical generation rate (Equation presented) and an assumed lifetime for interband recombination (see Ref. [37]) of (Equation presented), leading to a steady-state carrier density (Equation presented).
    • Our choice for the hot carrier density constitutes an upper limit under AM 1.5 illumination, as obtained by combining a carrier optical generation rate (Equation presented) and an assumed lifetime for interband recombination (see Ref. [37]) of (Equation presented), leading to a steady-state carrier density (Equation presented).
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