The energy-band alignment at molybdenum disulphide and high- k dielectrics interfaces

Applied Physics Letters

Volumn 104, Issue 23, 2014, Pages

  Tao, Junguang ^a   Chai, J W ^a   Zhang, Z ^a   Pan, J S ^a   Wang, S J ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; DIELECTRIC MATERIALS; MOLYBDENUM; PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM ALLOYS;

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONDUCTION BAND OFFSET; ENERGY-BAND ALIGNMENT; FERMI LEVEL PINNING; HIGH-K DIELECTRIC; HIGH-K DIELECTRIC OXIDES; MOLYBDENUM DISULPHIDE; VALENCE BAND OFFSETS;

MOLYBDENUM OXIDE;

EID: 84902477786     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4883865     Document Type: Article

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