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Volumn 89, Issue 21, 2014, Pages

Comparing electron-phonon coupling strength in diamond, silicon, and silicon carbide: First-principles study

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EID: 84902473011     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.89.214304     Document Type: Article
Times cited : (107)

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    • In Ref. [9] we reported a ZP band gap correction for diamond of (Equation presented) eV. Those calculations used a (Equation presented) supercell, and should therefore be compared with the value of (Equation presented) eV reported in Table III. The difference between these two values is due to the different treatment of the vibrational wave function and (Equation presented). In Ref. [9], we used an anharmonic vibrational wave function and a principal axes expansion for (Equation presented).
    • In Ref. [9] we reported a ZP band gap correction for diamond of (Equation presented) eV. Those calculations used a (Equation presented) supercell, and should therefore be compared with the value of (Equation presented) eV reported in Table III. The difference between these two values is due to the different treatment of the vibrational wave function and (Equation presented). In Ref. [9], we used an anharmonic vibrational wave function and a principal axes expansion for (Equation presented).


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