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Japanese Journal of Applied Physics

Volumn 53, Issue 4 SPEC. ISSUE, 2014, Pages

Diffusion coefficients of impurity atoms in BaSi2 epitaxial films grown by molecular beam epitaxy

(5) Zhang, Ning a Nakamura, Kotaro a Baba, Masakazu a Toko, Kaoru a Suemasu, Takashi a,b

a UNIVERSITY OF TSUKUBA (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; EPITAXIAL FILMS; EPITAXIAL GROWTH; GRAIN BOUNDARIES; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY;

IMPURITY ATOMS; SI (1 1 1); SIMS PROFILE; TEMPERATURE DEPENDENCE;

DIFFUSION;

EID: 84902439522 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.7567/JJAP.53.04ER02 Document Type: Conference Paper

Times cited : (13)

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