Experimental investigation of bias current and load modulation effects in phase distortion of GaN HEMTs

Electronics Letters

Volumn 50, Issue 10, 2014, Pages 773-775

  Quaglia, R ^a   Piazzon, L ^b   Camarchia, V ^a   Giofre R ^b   Pirola, M ^a   Colantonio, P ^b   Ghione, G ^a   Giannini, F ^b  

^a POLITECNICO DI TORINO   (Italy)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; MODULATION; POWER AMPLIFIERS; SIGNAL DISTORTION;

BIAS POINTS; DOHERTY POWER AMPLIFIER; EXPERIMENTAL INVESTIGATIONS; FLAT PHASE; GAN HEMTS; LOAD MODULATION; OUTPUT POWER; PHASE DISTORTIONS;

DOHERTY AMPLIFIERS;

EID: 84901981245     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2014.0983     Document Type: Article

References (5)

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3. Ghannouchi, F., and Hammi, O.: 'Behavioral modeling and predistortion', IEEE Microw. Mag., 2009, 10, (7), pp. 52-64
4. Giofrè, R., Piazzon, L., Colantonio, P., and Giannini, F.: 'Being seventy-five still young: the Doherty power amplifier', Microw. J., 2012, 55, (4), pp. 72-88
5. Nunes, L.C., Cabral, P.M., and Pedro, J.C.: 'A physical model of power amplifiers AM/AM and AM/PM distortions and their internal relationship'. 2013 IEEE MTT-S Int. Microwave Symp. Dig. (IMS), 2013, pp. 1-4