Interaction of epitaxial silicene with overlayers formed by exposure to Al atoms and O2 molecules

Journal of Chemical Physics

Volumn 140, Issue 20, 2014, Pages

  Friedlein, R ^a   Van Bui, H ^b   Wiggers, F B ^b   Yamada Takamura, Y ^a   Kovalgin, A Y ^b   De Jong, M P ^b  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; MOLECULES; OXIDES; PHOTOELECTRON SPECTROSCOPY; SILICON;

ALUMINUM OXIDES; ATOMIC OXYGEN; CAPPING LAYER; CHEMICAL STATE; DISSOCIATIVE CHEMISORPTION; HIGH RESOLUTION; SI (1 1 1); VACUUM ENVIRONMENT;

ATOMS;

EID: 84901769057     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4878375     Document Type: Article

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