The formation of hexagonal-shaped InGaN-nanodisk on GaN-nanowire observed in plasma source molecular beam epitaxy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8986, Issue , 2014, Pages

  Ng, Tien Khee ^a   Gasim, Anwar ^a   Cha, Dongkyu ^a   Janjua, Bilal ^a   Yang, Yang ^a   Jahangir, Shafat ^a   Zhao, Chao ^a   Bhattacharya, Pallab ^b   Ooi, Boon Siew ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Catalyst free Growth Kinetics; Confocal Microscopy; InGaN GaN; Nanowires; Nitrogen plasma Source Molecular Beam Epitaxy; Photoluminescence Spectroscopy; Scanning Electron Microscopy

Indexed keywords

CONFOCAL MICROSCOPY; EPITAXIAL GROWTH; GALLIUM NITRIDE; KINETICS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE SPECTROSCOPY; PLASMA SOURCES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS;

CATALYST-FREE GROWTH; DETECTION WAVELENGTHS; INGAN/GAN; METALLIC MOLECULES; PLASMA SOURCE MOLECULAR BEAM EPITAXIES; PLASMA-ASSISTED MBE; SPATIAL INTENSITY; SUBSTRATE TEMPERATURE;

NANOWIRES;

EID: 84901766888     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.2039627     Document Type: Conference Paper

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