Influence of grain size and surface condition on minority-carrier lifetime in undoped n -BaSi2 on Si(111)

Journal of Applied Physics

Volumn 115, Issue 19, 2014, Pages

  Takabe, Ryota ^a   Hara, Kosuke O ^b   Baba, Masakazu ^a   Du, Weijie ^a   Shimada, Naoya ^a   Toko, Kaoru ^a   Usami, Noritaka ^b,c   Suemasu, Takashi ^a,c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DECAY (ORGANIC); MOLECULAR BEAM EPITAXY; X RAY PHOTOELECTRON SPECTROSCOPY;

CARRIER TRAPPING; MINORITY CARRIER LIFETIMES; MIRROR SURFACES; PHOTOCONDUCTIVITY DECAY; ROOM TEMPERATURE; SHOCKLEY-READ-HALL RECOMBINATIONS; SURFACE CONDITIONS; SURFACE REGION;

SILICON;

EID: 84901398175     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4878159     Document Type: Article

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