Graphene grown on Ge(0 0 1) from atomic source

Carbon

Volumn 75, Issue , 2014, Pages 104-112

  Lippert, Gunther ^a   Da̧browski, Jarek ^a   Schroeder, Thomas ^a   Schubert, Markus Andreas ^a   Yamamoto, Yuji ^a   Herziger, Felix ^b   Maultzsch, Janina ^b   Baringhaus, Jens ^c   Tegenkamp, Christoph ^c   Asensio, Maria Carmen ^d   Avila, Jose ^d   Lupina, Grzegorz ^a  

^a IHP   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^d SYNCHROTRON SOLEIL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; GRAPHENE; MICROELECTRONICS; SILICON; TRANSISTORS;

ACTIVE REGIONS; ATOMIC SOURCES; GE(0 0 1); GRAPHENE EDGES; PHYSICAL PROCESS; SHEET RESISTIVITY; SI TECHNOLOGY; SI(0 0 1);

SILICON WAFERS;

EID: 84900790458     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2014.03.042     Document Type: Article

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