Annealing effect on the low temperature thermoluminescence properties of GaSe single crystals

Journal of Luminescence

Volumn 154, Issue , 2014, Pages 131-135

  Isik, M ^a   Hadibrata, W ^b   Gasanly, N M ^b  

^a ATILIM UNIVERSITY   (Turkey)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Annealing; Defect; Semiconductors; Thermoluminescence

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DEFECTS; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS;

ANNEALING EFFECTS; ANNEALING TEMPERATURES; LOW TEMPERATURES; LOWER TEMPERATURES; PEAK SHAPE METHODS; TEMPERATURE RANGE; THERMOLUMINESCENCE PROPERTIES; TRAPPING CENTERS;

THERMOLUMINESCENCE;

EID: 84900434628     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2014.04.010     Document Type: Article

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