Advanced SPICE models applied to high power GaN devices and integrated GaN drive circuits

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 2014, Pages 493-496

  Roberts, John ^a   Lafontaine, Hugues ^a   McKnight Macneil, Cameron ^a  

^a GaN Systems Inc   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMOBILES; GALLIUM NITRIDE; POWER ELECTRONICS;

AUTOMOTIVE APPLICATIONS; DRIVE CIRCUITRY; DRIVE CIRCUITS; ELECTRICAL NOISE; GAN TRANSISTORS; HIGH TEMPERATURE; PRESENT STATUS; WIDE TEMPERATURE RANGES;

SPICE;

EID: 84900410656     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2014.6803354     Document Type: Conference Paper

References (7)

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2. Press Release-International Rectifier, Jan 2010.
3. Press Release-GaN Systems, Sept 2013
4. R. Chu, D. Brown, D. Sehnder, X Chen, A. Williams, R. Li, M. Chen, S. Newell, K. Boutros, "Normally-off GaN-on-Si Metal-Insulator-Semiconductor Field-Effect Transistor with 600-V Blocking Capability at 200C" 24th Int. Symp. Power Semiconductor Devices and ICs June 2012.
5. H. Lee, "GaN-on-silicon-Based Power Switch in Sintered Dual-Side Cooled Package" www.powerelectronics.com Jan 2013.
6. M. Briere, T. McDonald, H. Lee, L. Murlino, "Current Handling Capability of 600V GaN High Electron Mobility Transistors" Power Electronics Europe Issue 7 2012 pp. 26-28.
7. T. MacElwee, J. Roberts, H. Lafontaine, I. Scott, G. Klowak, and L. Yushyna "Characterization and Performance of D-Mode GaN HEMT Transistor Used in a cascode Configuration" 224th ECS San Francisco Meeting Oct. 2013.