Small-signal model of partially-depleted SOI MOSFETs and its parameter extraction

ICCDCS 2002 - 4th IEEE International Caracas Conference on Devices, Circuits and Systems

Volumn , Issue , 2002, Pages

  Tomaszewski, D ^a   Lukasiak, L ^b   Domanski, K ^a   Jakubowski, A ^b  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; MOSFET DEVICES; PARAMETER EXTRACTION;

NON-QUASI STATIC; PARASITIC CAPACITANCE; PARTIALLY-DEPLETED SOI; SMALL SIGNAL MODEL;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84900346404     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICCDCS.2002.1004035     Document Type: Conference Paper

References (6)

1. SILVACO, ATLAS User's Manual, Ver.3.0, June 1995
2. Y.P.Tsividis, Operation and Modeling of the MOS-Transistor, Mc Graw-Hill, 1987
3. S.E.Laux, .,Techniques for Small-Signal Analysis of Semiconductor Devices", IEEE Trans, on Electron Devices, Vol.32, No. 10, Oct 1985,pp.2028-2037
4. SILVACO, ATHENA User's Manual, Ver.3.0, June 1995
5. J.Chen, R.Solomon, T.-Y.Chan, P.-K.Ko, C.Hu, .,A CV Technique for Measuring Thin SOI Film Thickness", IEEE Electron Device Letters, Vol.12, No.8, Aug 1991, pp.453-455.
6. B. lniguez, B. Gentinne, V. Dessard, D. Flandre, .,A physically-based Coo-continuous model for accumulation mode SOI pMOSFETs", IEEE Trans. On Electron Devices, vol. 46, no. 12, 1999, pp. 2295-2303.