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Volumn 14, Issue sup1, 1988, Pages s1-s78

Application of molecular dynamics simulations to the study of ion-bombarded metal surfaces

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EID: 84899940868     PISSN: 10408436     EISSN: 15476561     Source Type: Journal    
DOI: 10.1080/10408438808244782     Document Type: Article
Times cited : (158)

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    • Angular distributions of ejected particles from ion-bombarded clean and reacted single-crystal surfaces
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    • Mechanisms of particle ejection from Cu(001) induced by the relative orientation of the bombarding primary ion
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    • Varga, P., Betz, G., and Viehbock, F. P., Eds., Institute fur Allgemeine Physik, Technical University, Vienna
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    • Near-threshold sputtering mechanisms from a computer simulation of argon-bombarded clean and oxygen-reacted copper single crystals
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    • created a color movie in 1983 which follows the development of four 5 keV collision cascades; most of the results described in this section were obtained by detailed study of the movie
    • Webb, R. P. and Harrison, D. E., Jr., created a color movie in 1983 which follows the development of four 5 keV collision cascades; most of the results described in this section were obtained by detailed study of the movie.
    • Webb, R.P.1    Harrison, D.E.2
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    • Computer simulation of pit formation in metals by ion bombardment
    • see also
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    • Structure sensitive factors in molecular cluster formation by ion bombardment of single crystal surfaces
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    • A molecular dynamics computer simulation study of the damage produced in metal target surfaces during ion bombardment
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    • Harrison, D. E., Jr., Mason, W. A., and Webb, R. P., A molecular dynamics computer simulation study of the damage produced in metal target surfaces during ion bombardment, in Secondary Ion Mass Spectrometry SIMS IV, Benninghoven, A., Okano, J., Shimizu, R., and Werner, H. W., Eds., Springer-Verlag, Berlin, 1984, 24.
    • (1984) Secondary Ion Mass Spectrometry SIMS IV , pp. 24
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    • Sputtering of gold foils in a high voltage electron microscope. A comparison of theory and experiments
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    • Additional information on “computer simulation of sputtering”
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    • Laser induced fluorescence as a technique for investigations of sputtering phenomena
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    • A molecular dynamics simulation study of the influence of the ion mass upon atom ejection processes
    • Harrison, D. E., Jr., A molecular dynamics simulation study of the influence of the ion mass upon atom ejection processes, J. Appl. Phys., 52, 4251, 1981.
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    • A molecular dynamics simulation study of the influence of the lattice atom potential function upon atom ejection processes
    • Harrison, D. E., Jr. and Webb, R. P., A molecular dynamics simulation study of the influence of the lattice atom potential function upon atom ejection processes, J. Appl. Phys., 53, 4193, 1982.
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    • Energy and angular distributions of Rh atoms ejected due to ion bombardment from Rh{111}: A theoretical study
    • Garrison, B. J., Reimann, C. T., Winograd, N., and Harrison, D. E., Jr., Energy and angular distributions of Rh atoms ejected due to ion bombardment from Rh{111}: A theoretical study, Phys. Rev. B, B1, 36, 3516, 1987.
    • (1987) Phys. Rev. B , vol.B1 , Issue.36 , pp. 3516
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    • Energy distributions of atoms sputtered from polycrystalline surfaces
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    • A comparison between multiple interaction computer simulations and the linear theory of sputtering
    • Jakas, M. M. and Harrison, D. E. Jr., A comparison between multiple interaction computer simulations and the linear theory of sputtering, Nucl. Instrum. Methods, B14, 535, 1986.
    • (1986) Nucl. Instrum. Methods , vol.B14 , Issue.535
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    • Winters, H. F. and Taglauer, E., Sputtering of chemisorbed nitrogen from single crystal planes of tungsten and molybdenum, Phys. Rev. B15, 35, 2174, 1987.
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    • Calculations of nuclear stopping, ranges, and straggling in the low-energy region
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