Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors

Nanoscale Research Letters

Volumn 9, Issue 1, 2014, Pages 1-5

  Gu, Weixia ^a   Shen, Jiaoyan ^a   Ma, Xiying ^a  

^a SUZHOU UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

CVD; Field effect transistors; Mobility; Molybdenum disulfide

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELD EFFECTS; ELECTRODES; FABRICATION; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; SULFUR COMPOUNDS;

CHEMICAL VAPOR DEPOSITIONS (CVD); FIELD EFFECT TRANSISTOR (FETS); MAXIMUM TRANSCONDUCTANCE; MOLYBDENUM DISULFIDE; ON/OFF CURRENT RATIO; OUTPUT CHARACTERISTICS; SPECIAL STRUCTURE; TWO DIMENSIONAL (2 D);

FIELD EFFECT TRANSISTORS;

EID: 84899650472     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-9-100     Document Type: Article

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