Avoiding unnecessary write operations in STT-MRAM for low power implementation

Proceedings - International Symposium on Quality Electronic Design, ISQED

Volumn , Issue , 2014, Pages 548-553

  Bishnoi, Rajendra ^a   Oboril, Fabian ^a   Ebrahimi, Mojtaba ^a   Tahoori, Mehdi B ^a  

^a KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

Low power; Non volatile memory; STT MRAM; Write avoidance

Indexed keywords

DATA STORAGE EQUIPMENT; MAGNETIC DEVICES;

EMERGING MEMORY TECHNOLOGIES; LOW POWER; LOW POWER IMPLEMENTATION; MAGNETIC TUNNEL JUNCTION; NON-VOLATILE MEMORY; STT-MRAM; TOTAL POWER CONSUMPTION; WRITE AVOIDANCE;

MRAM DEVICES;

EID: 84899486725     PISSN: 19483287     EISSN: 19483295     Source Type: Conference Proceeding    
DOI: 10.1109/ISQED.2014.6783375     Document Type: Conference Paper

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