Synthesis and decomposition of Ti3SiC2 under 1-5GPa at 1400°C

Key Engineering Materials

Volumn 602-603, Issue , 2014, Pages 499-502

  Zhu, Yuanyuan ^a   Li, Shangsheng ^a   Li, Liang ^a   Zhou, Aiguo ^a  

^a HENAN POLYTECHNIC UNIVERSITY   (China)

Author keywords

Decomposition; HPHT

Indexed keywords

BORON CARBIDE; CARBIDES; CERAMIC MATERIALS; CUBIC BORON NITRIDE; DECOMPOSITION; III-V SEMICONDUCTORS; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; TITANIUM CARBIDE;

HIGH PRESSURE; HIGH TEMPERATURE; HPHT; SUPERHARD COMPOSITES; TERNARY CARBIDE TI3SIC2; TI3SIC2;

TITANIUM COMPOUNDS;

EID: 84899025388     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/KEM.602-603.499     Document Type: Conference Paper

References (14)

1. 2 powders by mechanically activated sintering of elemental powders of Ti, Si and C, Mater. Sci. Eng. A, 407 (2005) 315-321.
2. 2, J. Am. Ceram. Soc., 79 (1996) 1953-1956.
3. 2 in the 25-1300°C temperature range, Acta Mater., 48 (2000) 453-459.
4. 2 powder synthesis, Ceram. International, 30 (2004) 1873-1877.
5. 2-Diamond Composites at High Pressure and High Temperature, Key Eng. Mater., 512 (2012) 671-675.
6. 2 composites by high-pressure and high-temperature technology, Diamond Related Mater., 29 (2012) 8-12.
7. 2 to 61 GPa, Appl. Phys. Letter., 74 (1999) 3782-3784.
8. 2, J. Am. Ceram. Soc., 79 (1996) 1953.
9. 2, J. Mater. Sci., 35 (2000) 4343-4346.
10. 2 prepared by reactive HIP, J. Mater. Sci., 34 (1999) 4385-4392.
11. 2 at ambient and elevated temperatures, Acta Mater., 49 (2001) 937-945.
12. 2, J. Am. Ceram. Soc., 83 (2000) 825-832.
13. M. Naguib, O. Mashtalir, J. Carle, V. Presser, J. Lu, L. Hultman, Y. Gogotsi, M.W. Barsoum, Two-Dimensional Transition Metal Carbides, ACS Nano, 6 (2012) 1322-1331.
14. 2, Advan. Mater., 23 (2011) 4248-4253.