Luminescence properties of boron and nitrogen doped graphene quantum dots prepared from arc-discharge-generated doped graphene samples

Chemical Physics Letters

Volumn 595-596, Issue , 2014, Pages 203-208

  Dey, Sunita ^a   Govindaraj, A ^a   Biswas, Kanishka ^a   Rao, C N R ^a  

^a International Centre for Materials Science   (India)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ENERGY GAP; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS;

ARC DISCHARGE; EXCITATION WAVELENGTH; LUMINESCENCE PROPERTIES; NITROGEN DOPED GRAPHENE; NITROGEN-DOPED; PHOTOLUMINESCENCE PROPERTIES; UP-CONVERSION; ZERO-DIMENSIONAL;

GRAPHENE;

EID: 84898844716     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2014.02.012     Document Type: Article

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