Inducing a lifshitz transition by extrinsic doping of surface bands in the topological crystalline insulator Pb1-xSnxSe

Physical Review Letters

Volumn 112, Issue 14, 2014, Pages

  Pletikosic I ^a,b   Gu, G D ^b   Valla, T ^b  

^a PRINCETON UNIVERSITY   (United States)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; LEAD; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DOPING; TIN;

ANGLE RESOLVED PHOTOELECTRON SPECTROSCOPY; CRYSTALLINE INSULATORS; ELECTRON HOLE SYMMETRY; ELECTRON-DOPED; INVARIANT POINTS; LIFSHITZ TRANSITION; NARROW-GAP SEMICONDUCTORS; SURFACE BRILLOUIN ZONES;

TOPOLOGY;

EID: 84898433014     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.112.146403     Document Type: Article

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