Charge control of antiferromagnetism at PbZr0.52Ti 0.48O3/La0.67Sr0.33MnO3 interface

Applied Physics Letters

Volumn 104, Issue 13, 2014, Pages

  Ma, X ^a   Kumar, A ^b,c   Dussan, S ^b   Zhai, H ^a   Fang, F ^a   Zhao, H B ^d   Scott, J F ^b,e   Katiyar, R S ^b   Lupke G ^a  

^a Dept of Economics and Thomas Jefferson Program in Public Policy at the College of William and Mary   (United States)

^b UNIVERSITY OF PUERTO RICO   (Puerto Rico)

^c NATIONAL PHYSICAL LABORATORY   (India)

^d FUDAN UNIVERSITY   (China)

^e UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETIC EXCHANGE; BULK MAGNETIZATION; FERROELECTRIC POLARIZATION; HETERO INTERFACES; INTERFACIAL SPINS; MULTIFERROIC HETEROSTRUCTURE; MULTIPLE DOMAINS; SECOND-HARMONIC;

FERROELECTRICITY; POLARIZATION;

MANGANESE OXIDE;

EID: 84898062149     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4870507     Document Type: Article

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41. See supplementary material at http://dx.doi.org/10.1063/1.4870507 E-APPLAB-104-040414 for more information on optical measurements, supplemental results, and control of interface charge injection and strain by gate voltage.