Physical characteristics and cation distribution of NiFe2O 4 thin films with high resistivity prepared by reactive co-sputtering

Journal of Applied Physics

Volumn 115, Issue 12, 2014, Pages

  Klewe, C ^a   Meinert, M ^a   Boehnke, A ^a   Kuepper, K ^b   Arenholz, E ^c   Gupta, A ^d   Schmalhorst, J M ^a   Kuschel, T ^a   Reiss, G ^a  

^a BIELEFELD UNIVERSITY   (Germany)

^b UNIVERSITY OF OSNABRÜCK   (Germany)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d University of Alabama   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; EPITAXIAL GROWTH; POSITIVE IONS; PULSED LASER DEPOSITION; SPUTTER DEPOSITION; SUBSTRATES; X RAY SPECTROSCOPY;

DC MAGNETRON CO-SPUTTERING; ELECTRICAL CONDUCTIVITY MEASUREMENTS; LOW-ACTIVATION ENERGY; MAGNETIC CHARACTERISTIC; OPTICAL SPECTROSCOPY; PHYSICAL CHARACTERISTICS; REACTIVE CO-SPUTTERING; ROOM-TEMPERATURE RESISTIVITY;

THIN FILMS;

EID: 84898049459     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4869400     Document Type: Article

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