|
|
Volumn 557, Issue , 2014, Pages 90-93
|
|
N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing
a,b
|
|
Author keywords
Electrical characterization; Epitaxial film; Ion implantation; Phosphorus impurity; Silicide semiconductor; Surface segregation
|
|
Indexed keywords
ACTIVATION ENERGY;
ANNEALING;
EPITAXIAL GROWTH;
ION IMPLANTATION;
PHOSPHORUS;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTOR DOPING;
SILICIDES;
SURFACE SEGREGATION;
DIFFUSION KINETICS;
ELECTRICAL CHARACTERIZATION;
HALL MEASUREMENTS;
PHOSPHORUS ION IMPLANTATIONS;
SECONDARY ION MASS SPECTROSCOPY;
STRUCTURAL DAMAGES;
TEMPERATURE DEPENDENCE;
THERMAL-ANNEALING;
EPITAXIAL FILMS;
|
|
EID: 84897915212
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2013.08.038 Document Type: Article |
|
Times cited : (28)
|
|
References (18)
|
