Process limitation for p-type CuSbS2 semiconductor with high electrical mobility of 20 cm2 V-1 s-1

Materials Research Bulletin

Volumn 53, Issue , 2014, Pages 290-294

  Wubet, Walelign ^a   Kuo, Dong Hau ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

A. Chalcostibite; A. Semiconductor; B. Electrical properties

Indexed keywords

A. CHALCOSTIBITE; ATMOSPHERIC CONTROLS; ELECTRICAL CONDUCTIVITY; ELECTRICAL MOBILITY; REACTIVE SINTERING; SINGLE PHASE; SINTERED BULK; SINTERING TEMPERATURES;

SINTERING;

ELECTRIC PROPERTIES;

EID: 84897902608     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2014.02.028     Document Type: Article

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