The electronic and optical properties of X-doped SrTiO3 (X = Rh, Pd, Ag): A first-principles calculations

International Journal of Modern Physics B

Volumn 28, Issue 9, 2014, Pages

  Qiu, Bo ^a   Yan, Xin Guo ^a   Huang, Wei Qing ^a   Huang, Gui Fang ^a   Jiao, Chao ^a   Zhan, Si Qi ^a   Long, Jin Ping ^a   Yang, Zheng Mei ^a   Wan, Zhuo ^a   Peng, P ^a  

^a HUNAN UNIVERSITY   (China)

Author keywords

doping effect; electronic and optical properties; First principles calculations; SrTiO 3

Indexed keywords

EID: 84897664254     PISSN: 02179792     EISSN: 17936578     Source Type: Journal    
DOI: 10.1142/S0217979214500313     Document Type: Article

References (42)

1. Z. G. Zou et al., Nature 414, 625 (2001
2. M. Ni et al., Renew. Sustain Energy Rev. 11, 401 (2007
3. F. E. Osterloh, Chem. Mater. 20, 35 (2008
4. A. Kudo and Y. Miseki, Chem. Soc. Rev. 38, 253 (2009
5. X. B. Chen et al., Chem. Rev. 110, 6503 (2010
6. G. F. Huang et al., J. Nanomater. 2013, 371356 (2013
7. Q. L. Chen et al., Mod. Phys. Lett. B 25, 119 (2011
8. Q. Li et al., J. Am. Chem. Soc. 133, 10878 (2011
9. J. G. Yu, L. F. Qi and M. Jaroniec, J. Phys. Chem. C 114, 13118 (2010
10. M. L. Guo and J. L. Du, Int. J. Mod. Phys. B 27, 1350123 (2013
11. T. S. Sreeprasad and T. Pradeep, Int. J. Mod. Phys. B 26, 1242001 (2012
12. J. Sato et al., J. Am. Chem. Soc. 127, 4150 (2005
13. K. Maeda et al., Bull. Chem. Soc. Jpn. 80, 1004 (2007
14. Y. Sakata et al., Catal. Lett. 125, 22 (2008
15. J.-M. Lehn, J.-P. Sauvage and R. Ziessel, Nouv. J . Chim. 4, 623 (1980
16. K. Domen et al., Bull. Chem. Soc. Jpn. 73, 1307 (2000
17. M. Miyauchi, M. Takashio and H. Tobimatsu, Langmuir 20, 232 (2004
18. H. Irie, Y. Maruyama and K. Hashimoto, J. Phys. Chem. C 111, 1847 (2007
19. S. Kawasaki et al., Appl. Phys. Lett. 101, 033910 (2012
20. T. Sun and M. Lu, Appl. Surf. Sci. 274, 176 (2013
21. T. H. Xie, X. Sun and J. Lin, J. Phys. Chem. C 112, 9753 (2008
22. D. F. Wang et al., J. Phys. Chem. B 110, 15824 (2006
23. J. W. Liu et al., J. Solid State Chem. 179, 3704 (2006
24. Y. R. Zhu et al., J. Inorg. Mater. 23, 443 (2008
25. R. Konta et al., J. Phys. Chem. B 108, 8992 (2004
26. C. Zhang et al., Physica B 407, 4649 (2012
27. W. Wei et al., J. Phys. Chem. C 113, 15046 (2009
28. X. Zhou, J. Y. Shi and C. Li, J. Phys. Chem. C 115, 8305 (2011
29. N. Li and K. L. Yao, AIP Adv. 2, 032135 (2012
30. H. F. Liu, Solid State Commun. 152, 2063 (2012
31. C. X. Yang et al., Physica B 407, 844 (2012
32. W. Bae, P. H. Borse and J. S. Lee, Appl. Phys. Lett. 92, 104107 (2008
33. M. D. Segall et al., J. Phys.: Dondens. Matt. 14, 2717 (2002
34. V. Milman et al., Int. J. Quantum Chem. 77, 895 (2000
35. D. D. Cuong et al., Phys. Rev. Lett. 98, 115503 (2007
36. A. Ruzsinszky et al., J. Chem. Phys. 125, 194112 (2006
37. D. Vanderbilt, Phys. Rev. B 41, 7892 (1990
38. H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13, 5188 (1976
39. H. C. Chen et al., J. Phys. Chem. C 116, 7897 (2012
40. Y. Li and J. Yu, AIP Adv. 3(6), 062116 (2013
41. T. Tomio et al., J. Appl. Phys. 76, 5886 (1994
42. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors (Springer-Verlag, Berlin, 1996