RF MEMS passives on high-resistivity silicon substrates

IEEE Microwave and Wireless Components Letters

Volumn 23, Issue 12, 2013, Pages 632-634

  Shim, T ^a,b   Raskin, Jean Pierre ^c   Neve, César Roda ^d   Rais Zadeh, Mina ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b BROADCOM CORPORATION   (United States)

^c UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^d IMEC   (Belgium)

Author keywords

Electromagnetic simulation; Parasitic surface conduction; RF MEMS passives; Trap rich HR Si substrate

Indexed keywords

DEVICE QUALITY FACTOR; ELECTROMAGNETIC SIMULATION; HIGH RESISTIVITY SILICON; HIGH-RESISTIVITY SILICON SUBSTRATE; MONOLITHICALLY INTEGRATED; PARASITIC SURFACE CONDUCTION; RF-MEMS; SUBSTRATE RESISTIVITY;

FREQUENCY RESPONSE; INTERFACES (MATERIALS); MONOLITHIC INTEGRATED CIRCUITS; SILICON; SILICON OXIDES;

SUBSTRATES;

EID: 84897584908     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2013.2283857     Document Type: Article

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