16 GHz integrated oscillator design with active elements in a production ready SiGe HBT MMIC technology

2000 30th European Microwave Conference, EuMC 2000

Volumn , Issue , 2000, Pages

  Sonmez E ^a   Abele, P ^a   Schad, K B ^a   Schumacher, H ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; MIM DEVICES;

ACTIVE ELEMENTS; CASCODE BUFFERS; HETEROSTRUCTURE BIPOLAR TRANSISTORS; HIGH OUTPUT POWER; INTEGRATED OSCILLATORS; LOAD INDEPENDENT; MMIC TECHNOLOGY; OSCILLATOR DESIGN;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 84897553753     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.2000.338839     Document Type: Conference Paper

References (5)

1. M. Bopp and A. Schuippen, "SiGe Transistor Technology for RF Applications," Microwave Journal, vol. 42, pp. 22-39, June 1999.
2. A. Schuippen, H. Dietrich, S. Gerlach, H. Kohnemann, J. Amdt, U. Seiler, R. Gotzfried, U. Erben, and H. Schumacher, "SiGe technology and components for mobile communications systems," Proc. Bipolar and BiCMOS Topical Meeting, pp. 130-134, 1996.
3. E. Sonmez, W. Dulrr, P. Abele, K.-B. Schad, and H. Schumacher, "Parameter Extraction of SiGe HBTs for a scalable MEXTRAM Model and Performance Verification by a SiGe HBT MMIC Actice Receive Mixer Design for 11 GHZ," 2000 IEEEIMTT-S Silicon Monolithic Integrated Circuits in RFSystems, Garmisch-Partenkirchen, Germany, April 2000.
4. W. J. Kloosterman, J. A. M. Geelen, and D. B. M. Klaasen, "Effective Parameter Extraction for the MEXTRAM Model," Proc. of IEEE Bipolar/ BiCMOS Circuits nad Technology Meeting, Minneapolis, MN, pp. 70-13, 1995.
5. L. de Vreede, HFSilicon ICsfor Wide-band Communication Systems. ISBN 90-90009594-2, Ph. D. Thesis, Delft University of Technology, 1996.